Abstract: A process for forming a solder bump on an under bump metal structure in the manufacture of a microelectronic device comprising exposing the under bump metal structure to an electrolytic bath comprising a source of Sn2+ ions, a source of Ag+ ions, a thiourea compound and/or a quaternary ammonium surfactant; and supplying an external source of electrons to the electrolytic bath to deposit a Sn—Ag alloy onto the under bump metal structure.

Abstract: A method for electrolessly filling a stacked memory cell interconnect feature comprising electroless deposition from a composition comprising Co ions and a reducing agent by bottom-up filling initiated by reduction to Co metal on an electrically conducting bottom of the feature. An electroless deposition composition for electrolessly depositing Co in a high aspect ratio stacked memory cell interconnect feature, the composition comprising water, Co ions, a complexing agent, a buffering agent, a borane-based reducing agent component, and a hypophosphite reducing agent component. There is a concentration ratio of borane-based reducing agent to hypophosphite reducing agent of less than about 0.5.

Abstract: Compositions and methods for silver plating onto metal surfaces such as PWBs in electronics manufacture to produce a silver plating which is greater than 80 atomic % silver, tarnish resistant, and has good solderability.

Abstract: A method for enhancing corrosion resistance of a tin-based surface on a workpiece involving contacting the tin-based surface with a composition comprising a phosphonic acid compound and water to form a phosphorus-based film over the tin-based coating thereby inhibiting corrosion of the tin-based surface. Phosphonic acid containing compositions having a concentration up to about 30 vol. % of an organic solvent, and water.

Abstract: A method for reducing whisker formation and preserving solderability in tin coatings over metal features of electronic components. The tin coating has internal tensile stress and is between about 0.5 ?m and about 4.0 ?m in thickness. There is a nickel-phosphorus layer under the tin coating.

Abstract: A method for reducing whisker formation in tin coatings over metal features of electronic components. The tin coating has internal tensile stress and is between about 0.5 ?m and about 4.0 ?m in thickness.