Abstract: A multi-element read-write magnetic recording head for recording information on a magnetic tape and for reading recorded information therefrom is provided. The recording head comprises an equal number of associated read elements and write elements to form a two-gap recording head comprising pairs of read and write elements. The two-gap recording head further comprises a first module and a second module, the first and second modules each comprising a plurality of read and write head elements. A first group of read and write heads is configured to perform in a forward direction of movement of the magnetic tape and a second group of read and write heads is configured to perform in a reverse direction of movement of the magnetic tape.

Abstract: A magneto-resistive read/write tape head is provided for reading and writing to tape media along a tape head face. The tape head comprises a plurality of modules, each module comprising a read element and a write element spaced apart and terminating at the tape head face and formed over a substrate. The read element comprises a soft film bias layer and a hard film bias layer butted against the SFB layer. The write element comprises two pole tips spaced apart by a gap. The tape head further includes a plurality of activating conducting coil turns operatively associated with the write element and covered by a cross-linked photoresist and positioned between the gap and one of the pole tips and set back from the tape head face.

Abstract: A thin-film magnetic head includes a substrate having first and second magnetic layers disposed above the substrate and formed as a laminated sequence of magnetic sub-layers. The first and second magnetic layers have corresponding first ends representing a pole tip region of the head, corresponding second ends representing a back gap region of the head, and corresponding intermediate portions representing an intermediate region of the head between the pole tip region and the back gap region. The first and second magnetic layers are joined together in physical contact at the back gap region and are spaced from one another at the pole tip region and at the intermediate region. A nonmagnetic gap layer is disposed between the first and second magnetic layers at the pole tip region. A magnetic coil structure is disposed between the first and second magnetic layers at the intermediate region.

Abstract: A magnetoresistive sensor design and fabrication process that provides improved microtrack profile linearity for servo elements while simultaneously providing stable and linear data sensing elements suitable for high density tape head applications. The stability and uniformity of both data and servo sensor elements is enhanced through the use of a grating profile under both the soft film biased magnetoresistive sensor layer and the hard bias stabilizing magnets. Processing steps are eliminated by replicating the grating pattern for the servo sensor elements through a thick layer of alumina or silicon dioxide. The outer read shield is removed from the servo elements using a stripping process that eliminates structural damage arising from alumina pinhole's. Both element types are free of significant Barkhausen noise and instability because of the grating-stabilized domains in both the active magnetoresistive regions and the passive hard-biasing regions of each sensor.

Abstract: A magnetoresistive sensor design and fabrication process that provides improved microtrack profile linearity for servo elements while simultaneously providing stable and linear data sensing elements suitable for high density tape head applications. The stability and uniformity of both data and servo sensor elements is enhanced through the use of a grating profile under both the soft film biased magnetoresistive sensor layer and the hard bias stabilizing magnets. Processing steps are eliminated by replicating the grating pattern for the servo sensor elements through a thick layer of alumina or silicon dioxide. The outer read shield is removed from the servo elements using a stripping process that eliminates structural damage arising from alumina pinholes. Both element types are free of significant Barkhausen noise and instability because of the grating-stabilized domains in both the active magnetoresistive regions and the passive hard-biasing regions of each sensor.

Abstract: An arbitrary pattern write head assembly for writing timing-based servo patterns on magnetic storage media is provided, comprising: (a) a first pole piece comprising a substrate comprising a magnetic material, said substrate having a major surface; (b) a plurality of electrically conducting windings formed on the major surface; and (c) a second pole piece formed on the substrate, with a portion thereof formed above the plurality of electrically conducting windings and electrically insulated therefrom, the second pole piece having at least one opening therethrough defining a gap above the electrically conducting windings and the substrate, the second pole piece comprising at least two layers, each layer comprising a magnetic material. A method of batch fabricating servo writer heads is also provided for batch fabrication of servo writer heads at a very low cost. The method enables fabrication of heads capable of azimuthal recording commonly practiced in the video recording art.

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions.