Abstract: Disclosed is a self-isolating cross-coupled sense amplifier latch circuit having five enhancement mode field effect transistor devices and two depletion mode field effect transistor devices. The first and second field effect transistors form a cross-coupled pair with true and complement outputs being available at the cross-coupled nodes. A third field effect transistor is connected to a common connection between the source electrodes of the cross-coupled pair and is used to establish a race condition after a small difference in potential has been applied to the aforementioned output nodes. A pair of depletion mode devices are connected as diodes between a positive potential (VH) and each of the output nodes, respectively. Each of the output nodes is connected to a respective bit line of a column of memory cells through enhancement mode field effect transistors connected as third and fourth unidirectionally conducting devices.

Abstract: A circuit comprising the parallel connection of an enhancement-and a depletion-type FET which exhibits reduced power and improved performance for both logic as well as memory circuits.