Patents by Inventor Joseph B. Edson
Joseph B. Edson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11966158Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.Type: GrantFiled: January 30, 2019Date of Patent: April 23, 2024Assignee: Inpria CorporationInventors: Benjamin L. Clark, Dominick Smiddy, Thomas J. Lamkin, Mark Geniza, Joseph B. Edson, Craig M. Gates
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Patent number: 11897906Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: GrantFiled: March 11, 2021Date of Patent: February 13, 2024Assignee: Inpria CorporationInventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
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Patent number: 11809081Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: June 6, 2022Date of Patent: November 7, 2023Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 11754924Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: July 6, 2022Date of Patent: September 12, 2023Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20230251569Abstract: The purification of monoalkyl tin trialkoxides and monoalkyl tin triamides are described using fractional distillation and/or ultrafiltration. The purified compositions are useful as radiation sensitive patterning compositions or precursors thereof. The fractional distillation process has been found to be effective for the removal of metal impurities down to very low levels. The ultrafiltration processes have been found to be effective at removal of fine particulates. Commercially practical processing techniques are described.Type: ApplicationFiled: April 19, 2023Publication date: August 10, 2023Inventors: Benjamin L. Clark, Dominick Smiddy, Thomas J. Lamkin, Mark Genzia, Joseph B. Edson, Craig M. Gates
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Patent number: 11673903Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: GrantFiled: April 11, 2018Date of Patent: June 13, 2023Assignee: Inpria CorporationInventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach
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Publication number: 20230004090Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 11537048Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: August 6, 2020Date of Patent: December 27, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 11500284Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: GrantFiled: October 30, 2020Date of Patent: November 15, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Publication number: 20220334487Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220334488Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220299878Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220291582Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: ApplicationFiled: March 28, 2022Publication date: September 15, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Patent number: 11392029Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: GrantFiled: November 5, 2019Date of Patent: July 19, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Publication number: 20220064192Abstract: Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C?CSiR?3)3, R?R?ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R?R?(R??O)CSnL3 or R?R?(N?C)CSnZ3.Type: ApplicationFiled: August 24, 2021Publication date: March 3, 2022Inventors: Joseph B. Edson, Brian J. Cardineau, William Earley, Kierra Huihui-Gist, Thomas J. Lamkin, Robert E. Jilek
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Publication number: 20210198293Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: ApplicationFiled: March 11, 2021Publication date: July 1, 2021Inventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
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Patent number: 10975109Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: GrantFiled: July 23, 2020Date of Patent: April 13, 2021Assignee: Inpria CorporationInventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
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Publication number: 20210048745Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: ApplicationFiled: October 30, 2020Publication date: February 18, 2021Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Publication number: 20210024552Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: ApplicationFiled: October 9, 2020Publication date: January 28, 2021Inventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson
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Publication number: 20200369691Abstract: A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR?)3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR?2)3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R? is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR?COR?)3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R? and R? are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.Type: ApplicationFiled: July 23, 2020Publication date: November 26, 2020Inventors: Joseph B. Edson, Thomas J. Lamkin, William Earley, Truman Wambach, Jeremy T. Anderson