Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by ozone treating the chamber component with air, nitrogen or argon O2, O3 at a temperature from about 25° C. to about 350° C.

Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: A solar cell and a solar laminate are described. The solar cell can have a front side which faces the sun during normal operation and a back side opposite front side. The solar cell can include conductive contacts having substantially reflective outer regions disposed on the back side of the solar cell. The solar laminate can include a first encapsulant, the first encapsulant disposed on the back side of the solar cell and a second encapsulant. The solar laminate can include the solar cell laminated between the first and second encapsulant. The substantially reflective outer regions of the conductive contacts and the first encapsulant can be configured to scatter and/or diffuse light at the back side of the solar laminate for substantial light collection at the back side of the solar cell. Methods of fabricating the solar cell are also described herein.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: A solar cell and a solar laminate are described. The solar cell can have a front side which faces the sun during normal operation and a back side opposite front side. The solar cell can include conductive contacts having substantially reflective outer regions disposed on the back side of the solar cell. The solar laminate can include a first encapsulant, the first encapsulant disposed on the back side of the solar cell and a second encapsulant. The solar laminate can include the solar cell laminated between the first and second encapsulant. The substantially reflective outer regions of the conductive contacts and the first encapsulant can be configured to scatter and/or diffuse light at the back side of the solar laminate for substantial light collection at the back side of the solar cell. Methods of fabricating the solar cell are also described herein.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: A method for plating metal to a solar cell is disclosed. The method includes plating a metal layer only on the surface of solar cell without plating metal along the solar cell edges by conducting a first current in a first direction in an electroplating bath, ejecting metal from the metal layer by conducting a second current in a second direction and plating additional metal to the metal layer by conducting a third current in the first direction. The first, second and third current can be alternated. Subsequent to an electroplating process, an ultrasonic cleaning process is performed on the solar cell to remove any excess plated metal along the surface and edges of the solar cell.

Abstract: A method for forming a contact region for a solar cell is disclosed. The method includes depositing a paste composed of a first metal above a substrate of the solar cell, curing the paste to form a first metal layer, electrolessly plating a second metal layer on the first metal layer and electrolytically plating a third metal layer on the second metal layer, where the second metal layer electrically couples the first metal layer to the third metal layer. The method can further include electrolytically plating a fourth metal layer on the third metal layer.

Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Abstract: Forming a porous layer on a silicon substrate. Forming the porous layer can include placing a first silicon substrate in a solution, where a first electrode is within a threshold distance to an edge of the silicon substrate. It can further include conducting a first current through the silicon substrate, where the first electrode can be positioned relative to the edge allowing for substantially uniform porosification along the edge of the first silicon substrate.

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

Abstract: Forming a porous layer on a silicon substrate. Forming the porous layer can include placing a first silicon substrate in a solution, where a first electrode is within a threshold distance to an edge of the silicon substrate. It can further include conducting a first current through the silicon substrate, where the first electrode can be positioned relative to the edge allowing for substantially uniform porosification along the edge of the first silicon substrate.

Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Abstract: A method for forming a contact region for a solar cell is disclosed. The method includes depositing a paste composed of a first metal above a substrate of the solar cell, curing the paste to form a first metal layer, electrolessly plating a second metal layer on the first metal layer and electrolyticly plating a third metal layer on the second metal layer, where the second metal layer electrically couples the first metal layer to the third metal layer. The method can further include electrolyticly plating a fourth metal layer on the third metal layer.

Abstract: A method for plating metal to a solar cell is disclosed. The method includes plating a metal layer only on the surface of solar cell without plating metal along the solar cell edges by conducting a first current in a first direction in an electroplating bath, ejecting metal from the metal layer by conducting a second current in a second direction and plating additional metal to the metal layer by conducting a third current in the first direction. The first, second and third current can be alternated. Subsequent to an electroplating process, an ultrasonic cleaning process is performed on the solar cell to remove any excess plated metal along the surface and edges of the solar cell.

Abstract: A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly disposed in the fluid basin, a substrate support member configured to support the substrate and contact the substrate electrically, and an encased auxiliary electrode assembly disposed in the fluid basin. The encased auxiliary electrode assembly generally comprises an auxiliary electrode disposed in a protective tube.

Abstract: A method and apparatus for supplying a dose to an electrolyte solution including measuring the time after adding fresh solution, measuring the Amp-hours after adding fresh solution, measuring the number of substrates processed by the solution, calculating the volume of a dose to supply to the solution based on the time, Amp-hours, and number of substrates processed, and adding the dose to the solution.