Abstract: A method for optimizing an LED lighting system cost includes steps of determining LED costs, power source costs, and total costs associated with a plurality of LED quantities, and identifying a lowest total cost as an optimal cost. A LED lighting system includes an LED operated by a constant-current driver at less than its maximum current capacity. A programmable controller including a feedback routine is used to compensate for intensity drift as an LED ages. Other embodiments of LED lighting systems include multiple LEDs producing light having various spectrums to optimize the lighting system efficiency and the effectiveness. A charge controller including an MPPT routine is advantageously employed with a LED lighting system powered by a limited-capacity power source.

Abstract: A method for optimizing an LED lighting system cost includes steps of determining LED costs, power source costs, and total costs associated with a plurality of LED quantities, and identifying a lowest total cost as an optimal cost. A LED lighting system includes an LED operated by a constant-current driver at less than its maximum current capacity. A programmable controller including a feedback routine is used to compensate for intensity drift as an LED ages. Other embodiments of LED lighting systems include multiple LEDs producing light having various spectrums to optimize the lighting system efficiency and the effectiveness. A charge controller including an MPPT routine is advantageously employed with a LED lighting system powered by a limited-capacity power source.

Abstract: An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region.

Abstract: A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structureare n-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage -trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

Abstract: Symmetrical/asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor)/BiCMOS (Bipolar CMOS) technologies by custom implementation of P1-N2-P2-N1//N1-P3-N3-P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS/BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354/interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC).

Abstract: An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region.

Abstract: A method for optimizing an LED lighting system cost includes steps of determining LED costs, power source costs, and total costs associated with a plurality of LED quantities, and identifying a lowest total cost as an optimal cost. A LED lighting system includes an LED operated by a constant-current driver at less than its maximum current capacity. A programmable controller including a feedback routine is used to compensate for intensity drift as an LED ages. Other embodiments of LED lighting systems include multiple LEDs producing light having various spectrums to optimize the lighting system efficiency and the effectiveness. A charge controller including an MPPT routine is advantageously employed with a LED lighting system powered by a limited-capacity power source.

Abstract: A clipping apparatus for preventing tripping hazards caused by cords and simplifying installation of decorative lights having a tension clip. The tension clip is substantially U-shaped having an elongated member having two downwardly extending arms, each arm having a base. Each base has a small, V-shaped recessed channel through which a cord or strand of lights extends. A fully adjustable slide and click mechanism lengthens or shortens the elongated member of the tension clip. A pair of outwardly angled and extending fasteners define a simple clip mechanism attached to the elongated member and or one or both of the two arms for use in suspending the cord from tension clips installed upside down.

Abstract: A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

Abstract: A tester for determining the condition of an electrochemical power source, e.g. a battery or main cell, is disclosed. The tester may comprise an electrolytic (coulometric) cell connected in series to a auxiliary cell. The auxiliary cell is a miniature electrochemical power cell. The electrolytic (coulometric) cell may have no electromotive force of its own and may comprise an anode and cathode of the same material, desirably silver, with an electrolyte contacting at least a portion of both the anode and cathode. The tester may be permanently connected in parallel to a main cell being tested and is thin enough to be integratable into a label for the main cell. As the main cell discharges, the electrolytic cell anode clears proportionally to the discharge of one of the electrodes of the main cell to provide a continuous visually discernible indication of the state of charge of the main cell.