Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.

Abstract: The present invention provides compositions for fishing. In particular, the present invention provides a bite indicator that detects the slightest bite of a fish on a hook or bait. The bite indicator is easily attached and removed from a rod by a resilient, self-securing fitting.

Abstract: The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.

Abstract: An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.

Abstract: A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.

Abstract: A memory element having a resistance variable material and methods for forming the same are provided. The method includes forming a plurality of first electrodes over a substrate and forming a blanket material stack over the first electrodes. The stack includes a plurality of layers, at least one layer of the stack includes a resistance variable material. The method also includes forming a first conductive layer on the stack and etching the conductive layer and at least one of the layers of the stack to form a first pattern of material stacks. The etched first conductive layer forming a plurality of second electrodes with a portion of the resistance variable material located between each of the first and second electrodes.

Abstract: A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.

Abstract: An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.

Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.

Abstract: Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed over a substrate. The stack includes a layer of chalcogenide material and a metal, e.g., silver, containing layer. A protective layer is formed over the stack. The protective layer blocks light, is conductive, and is etchable with the other layers of the stack. Further, the metal of the metal containing layer is substantially insoluble in the protective layer. The stack and the protective layer are then patterned and etched to form memory elements.

Abstract: A memory element having a resistance variable material and methods for forming the same are provided. The method includes forming a plurality of first electrodes over a substrate and forming a blanket material stack over the first electrodes. The stack includes a plurality of layers, at least one layer of the stack includes a resistance variable material. The method also includes forming a first conductive layer on the stack and etching the conductive layer and at least one of the layers of the stack to form a first pattern of material stacks. The etched first conductive layer forming a plurality of second electrodes with a portion of the resistance variable material located between each of the first and second electrodes.

Abstract: A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

Abstract: A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

Abstract: Electrode structures, variable resistance memory devices, and methods of making the same, which minimize electrode work function variation. Methods of forming an electrode having a minimized work function variation include methods of eliminating concentric circles of material having different work functions. Exemplary electrodes include electrode structures having concentric circles of materials with different work functions, wherein this difference in workfunction has been minimized by recessing these materials within an opening in a dielectric and forming a third conductor, having a uniform work function, over said recessed materials.

Abstract: A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.

Abstract: A method and apparatus for forming a thermally-evaporated binary (or greater) thin film are disclosed in which the surface area of an evaporation container is effectively increased by using an inert medium added to source materials that are to form the binary (or greater) film. Using this method and apparatus, films having better uniformity and stoichiometry are achievable.

Abstract: Multi-purpose food preparation kits for foods which include dough, at least a portion of which is exposed for cooking, browning, and crisping, and optionally rising. The kits include a support base of susceptor material elevated above a support surface by an elevator member either incorporated with a base or separate therefrom. Kits further include a ring component of susceptor material which surrounds the food product, and which is dimensioned larger than the initial dimensions of the food product, so as to be spaced therefrom, at least initially, prior to cooking. The space inside the ring component allows the dough to rise during cooking without obstruction by the susceptor ring and without imparting thermal energy from the susceptor ring to the dough surface. In one embodiment the susceptor base is provided in the form of a shipping carton.

Abstract: Embodiments of the invention provide a method of forming a chalcogenide material containing device, and particularly resistance variable memory elements. A stack of one or more layers is formed over a substrate. The stack includes a layer of chalcogenide material and a metal, e.g., silver, containing layer. A protective layer is formed over the stack. The protective layer blocks light, is conductive, and is etchable with the other layers of the stack. Further, the metal of the metal containing layer is substantially insoluble in the protective layer. The stack and the protective layer are then patterned and etched to form memory elements.