Patents by Inventor Joseph C. Doll

Joseph C. Doll has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11909376
    Abstract: A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: February 20, 2024
    Assignee: SITIME CORPORATION
    Inventors: Joseph C. Doll, Paul M. Hagelin, Ginel C. Hill, Nicholas Miller, Charles I. Grosjean
  • Patent number: 11897757
    Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm?3, and preferably between 1019 cm?3 and 1021 cm?3.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: February 13, 2024
    Assignee: SiTime Corporation
    Inventors: Renata M. Berger, Ginel C. Hill, Paul M. Hagelin, Charles I. Grosjean, Aaron Partridge, Joseph C. Doll, Markus Lutz
  • Publication number: 20230416081
    Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
    Type: Application
    Filed: June 23, 2023
    Publication date: December 28, 2023
    Inventors: Charles I. Grosjean, Nicholas Miller, Paul M. Hagelin, Ginel C. Hill, Joseph C. Doll
  • Patent number: 11807518
    Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm-3, and preferably between 1019 cm-3 and 1021 cm-3.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: November 7, 2023
    Assignee: SiTime Corporation
    Inventors: Renata M. Berger, Ginel C. Hill, Paul M. Hagelin, Charles I. Grosjean, Aaron Partridge, Joseph C. Doll, Markus Lutz
  • Patent number: 11724934
    Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
    Type: Grant
    Filed: November 30, 2022
    Date of Patent: August 15, 2023
    Assignee: SiTime Corporation
    Inventors: Charles I. Grosjean, Nicholas Miller, Paul M. Hagelin, Ginel C. Hill, Joseph C. Doll
  • Publication number: 20230183060
    Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
    Type: Application
    Filed: November 30, 2022
    Publication date: June 15, 2023
    Inventors: Charles I. Grosjean, Nicholas Miller, Paul M. Hagelin, Ginel C. Hill, Joseph C. Doll
  • Patent number: 11677379
    Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
    Type: Grant
    Filed: December 7, 2021
    Date of Patent: June 13, 2023
    Assignee: SiTime Corporation
    Inventors: Joseph C. Doll, Nicholas Miller, Charles I. Grosjean, Paul M. Hagelin, Ginel C. Hill
  • Patent number: 11584642
    Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: February 21, 2023
    Assignee: SiTime Corporation
    Inventors: Charles I. Grosjean, Nicholas Miller, Paul M. Hagelin, Ginel C. Hill, Joseph C. Doll
  • Publication number: 20220337218
    Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
    Type: Application
    Filed: June 23, 2022
    Publication date: October 20, 2022
    Inventors: Joseph C. Doll, Nicholas Miller, Charles I. Grosjean, Paul M. Hagelin, Ginel C. Hill
  • Patent number: 11442544
    Abstract: A force transducer for an electronic device can be operated in a drive mode and a sense mode simultaneously. In particular, the force transducer can provide haptic output while simultaneously receiving force input from a user. The force transducer is primarily defined by a monolithic piezoelectric body, a ground electrode, a drive electrode, and a sense electrode. The ground electrode and the drive electrode each include multiple electrically-electrically conductive sheets that extend into the monolithic body; the electrically conductive sheets of the ground electrode and the drive electrode are interdigitally engaged. The sense electrode of the force transducer is typically disposed on an exterior surface of the monolithic body.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: September 13, 2022
    Assignee: Apple Inc.
    Inventors: Joseph C. Doll, Pavan O. Gupta, Teera Songatikamas, Adam J. Monkowski
  • Publication number: 20220166403
    Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
    Type: Application
    Filed: December 7, 2021
    Publication date: May 26, 2022
    Inventors: Joseph C. Doll, Nicholas Miller, Charles I. Grosjean, Paul M. Hagelin, Ginel C. Hill
  • Patent number: 11228298
    Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: January 18, 2022
    Assignee: SiTime Corporation
    Inventors: Joseph C. Doll, Nicholas Miller, Charles I. Grosjean, Paul M. Hagelin, Ginel C. Hill
  • Publication number: 20210159875
    Abstract: A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.
    Type: Application
    Filed: December 8, 2020
    Publication date: May 27, 2021
    Inventors: Joseph C. Doll, Paul M. Hagelin, Ginel C. Hill, Nicholas Miller, Charles I. Grosjean
  • Patent number: 10892733
    Abstract: A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: January 12, 2021
    Assignee: SITIME CORPORATION
    Inventors: Joseph C. Doll, Paul M. Hagelin, Ginel C. Hill, Nicholas Miller, Charles I. Grosjean
  • Patent number: 10744531
    Abstract: In an embodiment, an electromagnetic reluctance actuator comprises: a core assembly including a plurality of magnetic cores arranged in a two-dimensional plane, each core comprised of ferromagnetic material and wound by a coil of conductive wire, the coils operable for producing magnetic flux density in response to electrical currents flowing in the coils, wherein the current in each coil flows in a direction that is opposite the currents flowing in adjacent coils; and an actuator, at least a portion of which comprises ferritic material magnetically coupled to the coils by a magnetic circuit, for producing mechanical force in response to the effect of magnetic flux on the portion, the portion of the actuator being mounted for movement relative to the core assembly.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: August 18, 2020
    Assignee: Apple Inc.
    Inventors: Teera Songatikamas, Joseph C. Doll, Matthew A. Bigarani
  • Patent number: 10676349
    Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: June 9, 2020
    Assignee: SiTime Corporation
    Inventors: Charles I. Grosjean, Nicholas Miller, Paul M. Hagelin, Ginel C. Hill, Joseph C. Doll
  • Patent number: 10658878
    Abstract: A wireless power transmitting device transmits wireless power signals to a wireless power receiving device. The wireless power receiving device has a rectifier and a wireless power receiving coil that receives wireless power signals. The wireless power transmitting device uses a layer of coils to transmit the wireless power signals. A dielectric layer in the wireless power transmitting device defines a charging surface that receives the wireless power receiving device. A layer of temperature sensors is interposed between the layer of coils and the dielectric layer. Control circuitry in the wireless power transmitting device uses temperature information from the temperature sensors to determine whether a foreign object such as a coin is present on the charging surface.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: May 19, 2020
    Assignee: Apple Inc.
    Inventors: J. Stephen Smith, Behrooz Shahsavari, Jacob E. Mattingley, Joseph C. Doll, Steven P. Hotelling, Siddharth Seth, Douglas J. Adams, Michael A. Cretella
  • Publication number: 20200076244
    Abstract: A wireless power transmitting device transmits wireless power signals to a wireless power receiving device. The wireless power receiving device has a rectifier and a wireless power receiving coil that receives wireless power signals. The wireless power transmitting device uses a layer of coils to transmit the wireless power signals. A dielectric layer in the wireless power transmitting device defines a charging surface that receives the wireless power receiving device. A layer of temperature sensors is interposed between the layer of coils and the dielectric layer. Control circuitry in the wireless power transmitting device uses temperature information from the temperature sensors to determine whether a foreign object such as a coin is present on the charging surface.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 5, 2020
    Inventors: J. Stephen Smith, Behrooz Shahsavari, Jacob E. Mattingley, Joseph C. Doll, Steven P. Hotelling, Siddharth Seth, Douglas J. Adams, Michael A. Cretella
  • Publication number: 20200028485
    Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
    Type: Application
    Filed: January 10, 2019
    Publication date: January 23, 2020
    Inventors: Joseph C. Doll, Nicholas Miller, Charles I. Grosjean, Paul M. Hagelin, Ginel C. Hill
  • Patent number: 10263596
    Abstract: Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: April 16, 2019
    Assignee: SiTime Corporation
    Inventors: Joseph C. Doll, Paul M. Hagelin, Ginel C. Hill, Nicholas Miller, Charles I. Grosjean