Abstract: A plastic garment hanger having a hook with an abutment for engaging an aperture formed in an indicator cap to support the indicator cap on the hanger is provided. A hook having an upwardly projecting web which defines an aperture wherein a descending flexible tongue for engaging an aperture formed in an indicator cap is also provided.

Abstract: A clip for a garment hanger H having a fixed jaw (1) and a movable jaw (2) connected by a membrane hinge (3), the movable jaw having an actuator arm (5) extending therefrom, and moulded plastics spring member (13) attached to the fixed jaw by attaching lugs (10,11) engaging openings (8,9) in the fixed jaw (1), said spring member (13) having a spring portion (14) extending angularly from an attaching portion (12) towards the actuating portion (5) of the movable jaw (2) to bias the movable jaw towards the closed position, said hanger H having a hood member (20) which surrounds the actuating portion (5) of the clip to deter inadvertent actuation.

Abstract: An indicator for attachment to the hook of a moulded plastics garment hanger is disclosed. The indicator has a body, moulded from plastics material, with spaced flat sides forming a cavity which is dimensioned to receive a top web of the hook. The body engages the web at the ends of the opening to the cavity to retain the indicator in position of the web. The body also has slots in the sides adapted for engagement by abutments on the web to retain the indicator in position on the hook.

Abstract: Disclosed is a garment hanger and a moulded plastic clip that comprises a front leg and a rear leg joined in a spaced relation by an integrally moulded resilient leaf, each leg having object engaging free ends, a portion overlying said leaf and formed with teeth for engagement with a pawl extending inwardly and outwardly from the front leg to provide a ratchet, said leaf having an elastic memory such that said legs are spaced apart in a predetermined neutral position when said ratchet is released.

Abstract: A clip for a garment hanger H having a fixed jaw (1) and a movable jaw (2) connected by a membrane hinge (3), the movable jaw having an actuator arm (5) extending therefrom, and moulded plastics spring member (13) attached to the fixed jaw by attaching lugs (10,11) engaging openings (8,9) in the fixed jaw (1), said spring member (13) having a spring portion (14) extending angularly from an attaching portion (12) towards the actuating portion (5) of the movable jaw (2) to bias the movable jaw towards the closed position, said hanger H having a hood member (20) which surrounds the actuating portion (5) of the clip to deter inadvertent actuation.

Abstract: A molded plastic garment hanger comprising a hook, a shoulder region extending from the hook and arms extending from said shoulder region, said arms being formed with an inverted generally U-shaped cross-section or configuration which extends from one arm to the other along a continuous or uninterrupted path which extends below transmission regions between the arms and shoulder regions, said shoulder region including a depressed region having an inverted generally U-shaped configuration extending across the shoulder region and being spaced from said cross-sectional configuration extending from one arm to the other by planar regions so that said cross-sectional configuration does not completely intersect said transition regions. The depressed region of the shoulder angles from the front plane of the hanger, to the rear plane of hanger.

Abstract: Disclosed is an improved Reactive Ion Etching (RIE) technique for etching polycrystalline silicon or single crystal silicon as must be done in Very Large Scale Integration (VLSI) using silicon technology. It teaches the use of an etch gas that consists of a mixture of silicon tetrafluoride (SiF.sub.4) and chlorine (Cl.sub.2) diluted with inert gas. This etch gas allows an RIE process which combines the very desirable features of selectivity (high Si/SiO.sub.2 etch rate ratio), directionality which creates vertical sidewalls on the etched features and contains no contaminants which can cause yield problems in VLSI circuits. Vertical side walls means no mask undercutting, hence zero etch bias.

Abstract: Disclosed is an improved Reactive Ion Etch (RIE) technique for etching polysilicon or single crystal silicon as must be done in Very Large Scale Integration (VLSI) using silicon technology. It teaches the use of an etch gas that consists of a mixture of sulfur hexafluoride (SF.sub.6) and chlorine (Cl.sub.2) diluted with inert gas. This etch gas allows an RIE process which combines the very desirable features of selectivity (high Si/SiO.sub.2 etch rate ratio) and directionality which creates vertical side walls on the etched features. Vertical side walls mean no mask undercutting, hence zero etch bias.It is particularly applicable to device processing in which micron or sub-micron sized lines must be fabricated to extremely close tolerances. It is a distinct improvement over wet chemical etching or plasma etching as it is conventionally applied.

Abstract: An improved Reactive Ion Etching (RIE) technique for preferentially etching polysilicon is described as is needed in Very Large Scale Integration (VLSI) using silicon technology. The etch gas is a mixture of carbon tetrafluoride (CF.sub.4) and chlorine (Cl.sub.2) diluted with inert gas. The pressure of the system is required to be in the range of about 10 to 500 milli Torr. This etch gas allows an RIE process which combines the very desirable features of selectivity (high polycrystalline silicon/monocrystalline silicon etch rate ratio) and directionality which creates substantially vertical sidewalls on the etched features.