Abstract: A cost-effective and environmentally benign cleaning method is provided which comprises introducing an etch gas into the chamber, performing a first cleaning process to remove the deposited materials at a high rate, and performing a second cleaning process to remove the deposited materials at a high etch selectivity with respect to the materials forming the chamber. The first cleaning process is performed at a first pressure, the second cleaning process is performed at a second pressure. The second pressure is substantially lower than the first pressure to enhance the etching selectivity.

Abstract: A CVD process for the deposition of silicon oxide by reacting BTBAS with an ozone reactant gas comprising providing a semiconductor wafer substrate in a single wafer reactor, contacting said substrate with a gaseous mixture containing a bis-tertiary butyl aminosilane reactant and an ozone reactant at a pressure ranging from about 10 Torr to about 760 Torr, and, heating said mixture at a temperature ranging from about 400 to about 600° C., whereby said reactants are reacted to deposit said oxide as a film on said substrate.