Patents by Inventor Joseph C. Werner
Joseph C. Werner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11866821Abstract: Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.Type: GrantFiled: March 2, 2020Date of Patent: January 9, 2024Assignee: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Jiyong Huang, Joseph C. Werner, Stanley Wu, Mahesh Adinath Kanawade, Yikai Chen, Yixing Lin, Ying Ma
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Patent number: 11846011Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.Type: GrantFiled: November 2, 2022Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Joseph C. Werner
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Patent number: 11837448Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.Type: GrantFiled: April 27, 2021Date of Patent: December 5, 2023Assignee: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Jiyong Huang, Jang Seok Oh, Joseph C. Werner, Nitin Khurana, Ganesh Balasubramanian, Jennifer Y. Sun, Xinhai Han, Zhijun Jiang
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Publication number: 20230049431Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.Type: ApplicationFiled: November 2, 2022Publication date: February 16, 2023Applicant: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Joseph C. Werner
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Patent number: 11499231Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.Type: GrantFiled: April 9, 2020Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Joseph C. Werner
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Publication number: 20220344135Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.Type: ApplicationFiled: April 27, 2021Publication date: October 27, 2022Inventors: Shuran SHENG, Lin ZHANG, Jiyong HUANG, Jang Seok OH, Joseph C. WERNER, Nitin KHURANA, Ganesh BALASUBRAMANIAN, Jennifer Y. SUN, Xinhai HAN, Zhijun JIANG
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Publication number: 20220113198Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method includes receiving, at the temperature monitoring system (TMS) controller, information from a first plurality of temperature sensors and a second plurality of temperature sensors, comparing, using the TMS controller, the temperature information to one or more pre-determined control limits, and communicating, using the TMS controller, an out-of-control event to a user. Generally, the temperature monitoring system features the first and second pluralities of temperature sensors, the TMS controller, a first connection module, and a second connection module.Type: ApplicationFiled: October 14, 2020Publication date: April 14, 2022Inventors: Shuran SHENG, Lin ZHANG, Joseph C. WERNER
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Patent number: 11215934Abstract: Methods and apparatus for detecting ultraviolet light are provided herein. For example, an ultraviolet (UV) process chamber includes a vacuum window or a transparent showerhead; a UV light source disposed above one of the vacuum window or the transparent showerhead and configured to generate and transmit UV light into a process volume of the UV process chamber; and a first UV sensor configured to measure at least one of emissivity from the UV light source or irradiance of the UV light transmitted into the process volume and to transmit a signal corresponding to a measured at least one of emissivity from the UV light source or irradiance of the UV light to a controller coupled to the UV process chamber during operation.Type: GrantFiled: July 21, 2020Date of Patent: January 4, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Ralph Peter Antonio, Shuran Sheng, Lin Zhang, Joseph C. Werner
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Publication number: 20210317578Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.Type: ApplicationFiled: April 9, 2020Publication date: October 14, 2021Applicant: Applied Materials, Inc.Inventors: Shuran Sheng, Lin Zhang, Joseph C. Werner
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Patent number: 11094647Abstract: A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.Type: GrantFiled: August 6, 2019Date of Patent: August 17, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Shuran Sheng, Lin Zhang, Joseph C. Werner
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Publication number: 20210223707Abstract: Methods and apparatus for detecting ultraviolet light are provided herein. For example, an ultraviolet (UV) process chamber includes a vacuum window or a transparent showerhead; a UV light source disposed above one of the vacuum window or the transparent showerhead and configured to generate and transmit UV light into a process volume of the UV process chamber; and a first UV sensor configured to measure at least one of emissivity from the UV light source or irradiance of the UV light transmitted into the process volume and to transmit a signal corresponding to a measured at least one of emissivity from the UV light source or irradiance of the UV light to a controller coupled to the UV process chamber during operation.Type: ApplicationFiled: July 21, 2020Publication date: July 22, 2021Inventors: RALPH PETER ANTONIO, SHURAN SHENG, LIN ZHANG, JOSEPH C. WERNER
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Publication number: 20200370174Abstract: Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.Type: ApplicationFiled: March 2, 2020Publication date: November 26, 2020Inventors: Shuran SHENG, Lin ZHANG, Jiyong HUANG, Joseph C. WERNER, Stanley WU, Mahesh Adinath KANAWADE, Yikai CHEN, Yixing LIN, Ying MA
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Publication number: 20200098702Abstract: A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.Type: ApplicationFiled: August 6, 2019Publication date: March 26, 2020Inventors: Shuran SHENG, Lin ZHANG, Joseph C. WERNER
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Publication number: 20190221458Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.Type: ApplicationFiled: January 14, 2019Publication date: July 18, 2019Inventors: Xuesong LU, Lin ZHANG, Joseph C. WERNER, Jang Seok OH, Balaji PASUPATHY, Michael W. JOHNSON
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Publication number: 20120211164Abstract: Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.Type: ApplicationFiled: April 25, 2012Publication date: August 23, 2012Applicant: Applied Materials, Inc.Inventors: Ashish Shah, Dale R. DuBois, Ganesh Balasubramanian, Mark A. Fodor, Eui Kyoon Kim, Chiu Chan, Karthik Janakiraman, Thomas Nowak, Joseph C. Werner, Visweswaren Sivaramakrishnan, Mohamad Ayoub, Amir Al-Bayati, Jianhua Zhou
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Patent number: 8197636Abstract: Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.Type: GrantFiled: April 21, 2008Date of Patent: June 12, 2012Assignee: Applied Materials, Inc.Inventors: Ashish Shah, Dale R. DuBois, Ganesh Balasubramanian, Mark A. Fodor, Eui Kyoon Kim, Chiu Chan, Karthik Janakiraman, Thomas Nowak, Joseph C. Werner, Visweswaren Sivaramakrishnan, Mohamad Ayoub, Amir Al-Bayati, Jianhua Zhou
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Publication number: 20090017635Abstract: The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.Type: ApplicationFiled: July 11, 2008Publication date: January 15, 2009Inventors: Ashish Shah, Ganesh Balasubramanian, Dale R. Du Bois, Mark A. Fodor, Eui Kyoon Kim, Chiu Chan, Karthik Janakiraman, Thomas Nowak, Joseph C. Werner, Visweswaren Sivaramakrishnan, Mohamad Ayoub, Amir Al-Bayati, Jianhua Zhou
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Publication number: 20090014127Abstract: Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.Type: ApplicationFiled: April 21, 2008Publication date: January 15, 2009Inventors: Ashish Shah, Dale R. DuBois, Ganesh Balasubramanian, Mark A. Fodor, Eui Kyoon Kim, Chiu Chan, Karthik Janakiraman, Thomas Nowak, Joseph C. Werner, Visweswaren Sivaramakrishnan, Mohamad Ayoub, Amir Al-Bayati, Jianhua Zhou