Abstract: A method is provided for forming an adhered membrane roof system that meets Factory Mutual (FM) 4470/4474 standards for wind uplift. The method comprises applying a bond adhesive to a substrate on a roof to form an adhesive layer and applying a membrane directly to the adhesive layer. The bond adhesive includes a moisture-curable polymer.

Abstract: A roof assembly comprising a roof deck; a thermoplastic membrane covering the deck; and a fabric having disposed thereon expandable graphite.

Abstract: A roof assembly comprising: a roof deck; a thermoplastic membrane covering the deck; and a fabric having disposed thereon expandable graphite.

Abstract: A method for preparing a roofing membrane in the form of a roll, comprising the steps of: providing a polymeric membrane; providing a fabric having a coating disposed thereon; attaching the polymeric membrane to the fabric to form a composite; and rolling the composite. Wherein the coating includes expandable graphite dispersed within a binder.

Abstract: A method for preparing a roofing membrane in the form of a roll, comprising the steps of: providing a polymeric membrane; providing a fabric having a coating disposed thereon; attaching the polymeric membrane to the fabric to form a composite; and rolling the composite. Wherein the coating includes expandable graphite dispersed within a binder.

Abstract: A multi-layered membrane comprising a first thermoplastic layer and a second thermoplastic layer, where the second layer includes expandable graphite.

Abstract: A method and system are provided for improving predictions of electrical power usage. In the method and system, load and/or environmental data is classified into data sets that correspond to different modes of operation of an electrical load. Different predictive models are also provided for each set of classified data. The predictive models may provide more efficient and/or more accurate predictions of power usage since each model is limited to a particular mode of operation.

Abstract: A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.

Abstract: An apparatus and related methods for constructing articles with cured pressure-sensitive adhesives comprising (i) a coater that applies a curable adhesive to a membrane; (ii) a cross-linking apparatus adapted to receive said membrane with said curable adhesive, said cross-linking apparatus comprising a light source positioned a first predetermined height above an aperture plate having an aperture therethrough, wherein said aperture plate is positioned a second predetermined height, said first predetermined height and said second predetermined height selected to define an exposure area of light emitted from said light source on to said curable adhesive to form a composite product; and (iii) a roll adapted to receive said composite product, said roll adapted to control a speed at which said membrane with said curable adhesive is exposed to light from said light source.

Abstract: A method is provided for forming an adhered membrane roof system that meets Factory Mutual (FM) 4470/4474 standards for wind uplift. The method comprises applying a bond adhesive to a substrate on a roof to form an adhesive layer and applying a membrane directly to the adhesive layer. The bond adhesive includes a moisture-curable polymer.

Abstract: A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.

Abstract: A method is provided for forming an adhered membrane roof system that meets Factory Mutual (FM) 4470/4474 standards for wind uplift. The method comprises applying a bond adhesive to a substrate on a roof to form an adhesive layer and applying a membrane directly to the adhesive layer. The bond adhesive includes a moisture-curable polymer.

Abstract: A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.

Abstract: Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer.

Abstract: An apparatus and related methods for constructing articles with cured pressure-sensitive adhesives comprising (i) a coater that applies a curable adhesive to a membrane; (ii) a cross-linking apparatus adapted to receive said membrane with said curable adhesive, said cross-linking apparatus comprising a light source positioned a first predetermined height above an aperture plate having an aperture therethrough, wherein said aperture plate is positioned a second predetermined height, said first predetermined height and said second predetermined height selected to define an exposure area of light emitted from said light source on to said curable adhesive to form a composite product; and (iii) a roll adapted to receive said composite product, said roll adapted to control a speed at which said membrane with said curable adhesive is exposed to light from said light source.

Abstract: A method and system are provided for improving predictions of electrical power usage. In the method and system, load and/or environmental data is classified into data sets that correspond to different modes of operation of an electrical load. Different predictive models are also provided for each set of classified data. The predictive models may provide more efficient and/or more accurate predictions of power usage since each model is limited to a particular mode of operation.

Abstract: An apparatus and related methods for constructing articles with cured pressure-sensitive adhesives comprising (i) a coater that applies a curable adhesive to a membrane; (ii) a cross-linking apparatus adapted to receive said membrane with said curable adhesive, said cross-linking apparatus comprising a light source positioned a first predetermined height above an aperture plate having an aperture therethrough, wherein said aperture plate is positioned a second predetermined height, said first predetermined height and said second predetermined height selected to define an exposure area of light emitted from said light source on to said curable adhesive to form a composite product; and (iii) a roll adapted to receive said composite product, said roll adapted to control a speed at which said membrane with said curable adhesive is exposed to light from said light source.

Abstract: A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.

Abstract: A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.

Abstract: A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.