Patents by Inventor Joseph Cavaness

Joseph Cavaness has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220393091
    Abstract: Methods, devices, and systems are described for forming a superconducting qubit. An example device may comprise a substrate having a first surface and a patterned layer adjacent the substrate and comprising tantalum in an alpha phase. The patterned layer may comprise at least a part of a structure for storing a quantum state.
    Type: Application
    Filed: November 11, 2020
    Publication date: December 8, 2022
    Inventors: Andrew HOUCK, Nathalie DE LEON, Robert Joseph CAVA, Alex PLACE, Lila RODGERS, Sara SUSSMAN, Mattias FITZPATRICK, Basil SMITHAM
  • Patent number: 7135438
    Abstract: A class of superconductive materials containing copper-oxygen bonding and with mixed cation-occupancy designed with a view to size and valence consideration yield useful values of critical temperature and other properties. Uses entail all applications which involves superconducting materials such as magnets and transmission lines which require continuous superconductivity paths as well as detectors (e.g., which may rely on tunneling).
    Type: Grant
    Filed: April 19, 1993
    Date of Patent: November 14, 2006
    Assignee: Lucent Technologies Inc.
    Inventors: Bertram Josef Batlogg, Robert Joseph Cava, Robert Bruce van Dover
  • Patent number: 6638894
    Abstract: A class of superconductive materials containing copper-oxygen bonding and with mixed cation-occupancy designed with a view to size and valence consideration yield useful values of critical temperature and other properties. Uses entail all applications which involves superconducting materials such as magnets and transmission lines which require continuous superconductivity paths as well as detectors (e.g., which may rely on tunneling).
    Type: Grant
    Filed: March 10, 1987
    Date of Patent: October 28, 2003
    Assignee: Lucent Technologies Inc.
    Inventors: Bertram Josef Batlogg, Robert Joseph Cava, Robert Bruce van Dover
  • Patent number: 6635603
    Abstract: A class of superconductive materials containing copper-oxygen bonding and with mixed cation-occupancy designed with a view to size and valence consideration yield useful values of critical temperature and other properties. Uses entail all applications which involves superconducting materials such as magnets and transmission lines which require continuous superconductivity paths as well as detectors (e.g., which may rely on tunneling).
    Type: Grant
    Filed: March 3, 1987
    Date of Patent: October 21, 2003
    Assignee: Lucent Technologies Inc.
    Inventors: Bertram Josef Batlogg, Robert Joseph Cava, Robert Bruce van Dover
  • Patent number: 6630425
    Abstract: Superconducting copper oxides of the perovskite structure are modified to have mixed occupancy of a cation site, thereby resulting in increased limits in critical field and/or critical current. Mixed occupancy may be observed in terms of increased resistivity as the superconducting material reverts to a nonsuperconducting state. A significant advantage, at least for preferred compositions, derives from the fact that critical temperature is unaffected relative to the prototypical material.
    Type: Grant
    Filed: March 18, 1987
    Date of Patent: October 7, 2003
    Assignee: Lucent Technologies Inc.
    Inventors: Bertram Josef Batlogg, Robert Joseph Cava, Robert Bruce van Dover
  • Patent number: 6096263
    Abstract: A novel intermetallic superconductor with surprisingly high transition temperature is disclosed. The material comprises B and C, and can form a bulk superconductor. Exemplary of the novel superconductors is material of nominal composition YPd.sub.5 B.sub.3 C.sub.x, with x chosen such that the C:B ratio is in the range 0.05-2. An exemplary bulk sample of such composition has T, (onset) of 22.5 K, with more than 15 volume % of the sample being superconducting.
    Type: Grant
    Filed: December 10, 1993
    Date of Patent: August 1, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, James Joseph Krajewski
  • Patent number: 6093668
    Abstract: Dielectric materials comprising Ca.sub.5 R.sub.2 XO.sub.12 in which R is either Nb or Ta and X is selected from Ti and Ti.sub.1-x Zr.sub.x, have high dielectric constants (Ks), relatively low dielectric losses (Q), and low TCKs. The dielectric properties are affected by processing conditions, which for the both the niobate and tantalate embodiments preferably involve sintering and re-firing dielectric pellets at temperatures of 1400.degree. C. and above. The dielectric materials are particularly useful for microwave communications applications.
    Type: Grant
    Filed: December 29, 1998
    Date of Patent: July 25, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, James Joseph Krajewski
  • Patent number: 6074603
    Abstract: A novel intermetallic superconductor with surprisingly high transition temperature is disclosed. The material comprises B and C, and can form a bulk superconductor. Exemplary of the novel superconductors is material of nominal composition YPd.sub.5 B.sub.3 C.sub.x, with x chosen such that the C:B ratio is in the range 0.05-2. An exemplary bulk sample of such composition has T.sub.c (onset) of 22.5 K, with more than 15 volume % of the sample being superconducting.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: June 13, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, James Joseph Krajewski
  • Patent number: 5993947
    Abstract: Dielectric materials comprising Ca.sub.2 Ta.sub.2-x Nb.sub.x O.sub.7 have high dielectric constants (Ks) and relatively low temperature coefficients of dielectric constants (TCKs). Preferably, in this composition 0.20.ltoreq.x.ltoreq.1.20 and more preferably 0.32.ltoreq.x.ltoreq.0.40, and particularly preferred is the composite where x is 0.36. With a preferred embodiment where x is about 0.36, the dielectric constant is near 30 and the TCK is about 2 ppm/.degree.C., and the Q of the polycrystalline ceramic at 1 MHz is approximately 5000.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: November 30, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, James Joseph Krajewski
  • Patent number: 5982034
    Abstract: Thin films of isotropically conductive material are formed from Sr.sub.1-x Ca.sub.x RuO.sub.3. This material is easily deposited as a thin film by methods such as 90.degree. off-axis sputtering and laser ablation. The materials are epitaxially deposited on a wide variety of substrates and allow overlying epitaxial growth of an equally large number of significant oxides such as superconducting oxides, dielectric, and ferroelectric materials.
    Type: Grant
    Filed: November 19, 1993
    Date of Patent: November 9, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, Chang-Beom Eom
  • Patent number: 5923524
    Abstract: Applicant has discovered that the dielectric constant of Ta.sub.2 O.sub.5 can be significantly enhanced by the addition of small quantities of TiO.sub.2. Specifically, if Ta.sub.2 O.sub.5 is doped with more than about 3 mole percent of TiO.sub.2 the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta.sub.2 O.sub.5 :0.08TiO.sub.2, the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.
    Type: Grant
    Filed: December 16, 1996
    Date of Patent: July 13, 1999
    Assignee: Lucent Technologies Inc.
    Inventor: Robert Joseph Cava
  • Patent number: 5754392
    Abstract: Dielectric material of nominal composition (Al.sub.2 O.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x, with 0.03<x<0.15, unexpectedly can exhibit a relatively small temperature variation of the dielectric constant (e.g., <50 ppm/.degree.C. at 1 MHz and 20.degree. C.) and a relatively large value of the dielectric constant. The dielectric according to the invention advantageously is used in capacitive elements, e.g., in MOS capacitors in integrated circuits for personal communication devices.
    Type: Grant
    Filed: October 22, 1996
    Date of Patent: May 19, 1998
    Inventor: Robert Joseph Cava
  • Patent number: 5658485
    Abstract: The temperature dependent dielectric constants in the vicinity of room temperature have been measured for bulk ceramics which are phase-mixtures of Pb.sub.2 (Nb,Mg,Ti).sub.2 O.sub.6+x pyrochlores and Pb(Nb,Mg,Ti)O.sub.3 perovskites. A band of compositions has been found in which the negative temperature coefficient of dielectric constant for the pyrochlore is very closely compensated by the positive temperature coefficient of dielectric constant of the perovskite. These compositions have dielectric constants near 200, with Q's near 200 at 1 MHz, making them an intermediate family of dielectrics between the much studied high dielectric constant low Q Barium-Strontium Titanates and low dielectric constant high Q Barium-Lanthanide Titanates.
    Type: Grant
    Filed: October 3, 1995
    Date of Patent: August 19, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, James Joseph Krajewski, William Frederick Peck
  • Patent number: 5652062
    Abstract: Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.
    Type: Grant
    Filed: October 27, 1993
    Date of Patent: July 29, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Robert Joseph Cava, Julia Mae Phillips, Gordon Albert Thomas
  • Patent number: D417736
    Type: Grant
    Filed: December 29, 1998
    Date of Patent: December 14, 1999
    Inventor: Joseph Cavaness