Abstract: A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.

Abstract: A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.

Abstract: A laser detection and ranging (LADAR) system is provided for generating a three-dimensional image of an object. The LADAR system includes a laser source configured to project a laser beam onto the object, and a photodiode detector array configured to detect a reflection of the laser beam projected onto the object. The photodiode detector array includes a back interface, a front interface positioned opposite the back interface, and a passivation region disposed between the back interface and the front interface. The back interface includes at least one window, and the front interface includes at least one active region oriented to detect a photon associated with the reflection. The at least one active region includes an absorber and a multiplier. The filter is configured to have a bandgap between an absorber bandgap and a multiplier bandgap.

Abstract: A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.

Abstract: A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.

Abstract: A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.

Abstract: A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.

Abstract: A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.

Abstract: A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.

Abstract: A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P+ diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P+ diffusion region.

Abstract: A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P+ diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P+ diffusion region.