Patents by Inventor Joseph D. Danaher
Joseph D. Danaher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7288465Abstract: There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.Type: GrantFiled: April 28, 2005Date of Patent: October 30, 2007Assignee: International Business Machines CorpoartionInventors: Allan D. Abrams, Donald W. Brouillette, Joseph D. Danaher, Timothy C. Krywanczyk, Rene A. Lamothe, Ivan J. Stone, Matthew R. Whalen
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Patent number: 7074715Abstract: A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.Type: GrantFiled: November 15, 2004Date of Patent: July 11, 2006Assignee: International Business Machines CorporationInventors: Donald W. Brouillette, Joseph D. Danaher, Timothy C. Krywanczyk, Amye L. Wells
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Patent number: 7025891Abstract: A method of treating a molybdenum (moly) mask used in a C4 process to pattern C4 contacts. The moly mask has a wafer side which contacts a wafer during the C4 process and has a rough surface that includes spikes/projections of moly. The moly mask also has a non wafer side and a plurality of holes extending through the mask to pattern C4 contacts in the C4 process. An adhesive layer, such as an adhesive tape, is applied to the non wafer side of the moly mask, to enable a polishing tool to pull a vacuum on the non wafer side of the moly mask in spite of the presence of the holes to secure the moly mask during a subsequent polishing step. The tape also functions as a cushion so that defects on the non wafer side of the moly mask do not replicate through the moly mask to the polished wafer side of the moly mask.Type: GrantFiled: August 29, 2003Date of Patent: April 11, 2006Assignee: International Business Machines CorporationInventors: Steven R. Codding, Timothy C. Krywanczyk, Joseph D. Danaher, John C. Malinowski, James R. Palmer, Melvin T. Kelly, Caitlin W. Weinstein, Wolfgang Sauter
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Patent number: 7001827Abstract: There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.Type: GrantFiled: April 15, 2003Date of Patent: February 21, 2006Assignee: International Business Machines CorporationInventors: Allan D. Abrams, Donald W. Brouillette, Joseph D. Danaher, Timothy C. Krywanczyk, Rene A. Lamothe, Ivan J. Stone, Matthew R. Whalen
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Patent number: 6888223Abstract: A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.Type: GrantFiled: April 1, 2003Date of Patent: May 3, 2005Assignee: International Business Machines CorporationInventors: Donald W. Brouillette, Joseph D. Danaher, Timothy C. Krywanczyk, Amye L. Wells
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Publication number: 20040209444Abstract: There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.Type: ApplicationFiled: April 15, 2003Publication date: October 21, 2004Applicant: International Business Machines CorporationInventors: Allan D. Abrams, Donald W. Brouillette, Joseph D. Danaher, Timothy C. Krywanczyk, Rene A. Lamothe, Ivan J. Stone, Matthew R. Whalen
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Publication number: 20040198021Abstract: A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.Type: ApplicationFiled: April 1, 2003Publication date: October 7, 2004Inventors: Donald W. Brouillette, Joseph D. Danaher, Timothy C. Krywanczyk, Amye L. Wells