Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Abstract: The present disclosure relates to an ion implantation tool source and gas delivery system. The system can include a gas source comprising one or more gas supply vessels, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply vessels can supply a mixture of gases of hydrogen and fluoride. The hydrogen can be from 5% to 60% of the mixture of gases.

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Abstract: A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

Abstract: Described are storage and dispensing vessels and related systems and methods, for dispensing reagent gas from a vessel in which the reagent gas is held in sorptive relationship to a solid adsorbent medium, the reagent gas being contained at super-atmospheric pressure and the solid adsorbent medium comprising a metal-organic framework.

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x?1, y?1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g.

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Abstract: An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

Abstract: A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.

Abstract: Fluid dispensing assemblies are disclosed, for use in fluid supply packages in which such fluid dispensing assemblies as coupled to fluid supply vessels, for dispensing of fluids such as semiconductor manufacturing fluids. The fluid dispensing assemblies in specific implementations are configured to prevent application of excessive force to valve elements in the fluid dispensing assemblies, and/or for avoiding inadvertent or accidental open conditions of vessels that may result in leakage of toxic or otherwise hazardous or valuable gas. Also described are alignment devices for assisting coupling of coupling elements, e.g., coupling elements of fluid supply packages of the foregoing type, so that damage to such couplings as a result of misalignment is avoided.

Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.

Abstract: A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.