Abstract: A method for triggering switches in a defined order comprises providing two or more PCSS devices and a compatible optical trigger; projecting a beam from the optical trigger; splitting the optical beam into two or more paths toward the two or more PCSS devices, wherein each of the two or more paths has a different length such that each of the two or more PCSS devices are triggered with defined time differentials. Each of the defined path lengths may be determined with the speed of light from the optical trigger along the two or more paths in order to achieve the desired switch-timing differential. The optical path consists of at least one of an optical fiber, a mirror arrangement, and a lens arrangement. Path lengths may be controlled by different fiber lengths, and transmitting a beam through a solid having a higher index of refraction than other beam path(s).

Abstract: A PCSS comprises a photoconductive semiconductor block that exhibits electrically-conductive behavior when exposed to light of a predetermined wavelength; two or more electrodes fixed to the photoconductive semiconductor block and connectable to a power supply; a resonance cavity enveloping the photoconductive semiconductor block, the resonance cavity having a reflective outer surface to trap light within the resonance cavity and the photoconductive semiconductor block, the resonance cavity having a window through the reflective outer surface to admit light of the predetermined wavelength, the resonance cavity being transmissive to light of the predetermined wavelength within the reflective outer surface; and a light source directed toward the photoconductive semiconductor block and through the window, and emitting light at the predetermined wavelength. The photoconductive semiconductor block may include Si, GaAs, GaN, AlN, SiC, and/or Ga2O3.

Abstract: A method for triggering switches in a defined order comprises providing two or more PCSS devices and a compatible optical trigger; projecting a beam from the optical trigger; splitting the optical beam into two or more paths toward the two or more PCSS devices, wherein each of the two or more paths has a different length such that each of the two or more PCSS devices are triggered with defined time differentials. Each of the defined path lengths may be determined with the speed of light from the optical trigger along the two or more paths in order to achieve the desired switch-timing differential. The optical path consists of at least one of an optical fiber, a mirror arrangement, and a lens arrangement. Path lengths may be controlled by different fiber lengths, and transmitting a beam through a solid having a higher index of refraction than other beam path(s).

Abstract: A photoconductive semiconductor switch (PCSS) comprises a plurality of planar semiconductor layers, adjacent semiconductor layers separated by an insulation layer, forming a thin-film stack; a pair electrical contacts fixed to a perimeter of each of the semiconductor layers; an optical source arranged to project light of a predetermined wavelength through the plurality of semiconductor layers. The thin-film stack may comprise at least 10 layers of alternating semiconductor and insulating layers. The semiconductor and insulator layers consist of at least one of GaAs, GaN, GaP, AlN, GaSe, ZnSe, ZnTe, GaSb, InAs, GaN, AlAs, InP, CdS, InSe, CdTe, HgTe, InSb, AlSb, and AlGaN. The contacts consist of at least one of a doped semiconductor material. The optical source illuminates the thin-film stack from at least one of their edges, i.e. parallel to the thin-film layers, or straight through the thin-film stack, i.e. perpendicular to the thin-film layers, or any angle in between.

Abstract: A PCSS comprises a photoconductive semiconductor block that exhibits electrically-conductive behavior when exposed to light of a predetermined wavelength; two or more electrodes fixed to the photoconductive semiconductor block and connectable to a power supply; a resonance cavity enveloping the photoconductive semiconductor block, the resonance cavity having a reflective outer surface to trap light within the resonance cavity and the photoconductive semiconductor block, the resonance cavity having a window through the reflective outer surface to admit light of the predetermined wavelength, the resonance cavity being transmissive to light of the predetermined wavelength within the reflective outer surface; and a light source directed toward the photoconductive semiconductor block and through the window, and emitting light at the predetermined wavelength. The photoconductive semiconductor block may include Si, GaAs, GaN, AlN, SiC, and/or Ga2O3.