Abstract: A glow discharge tube comprising a gas-sealed envelope, a first electrode, and a second electrode. The gas-sealed envelope defining an interior with an interior surface defining a first interior portion with a first interior surface and a second interior portion with a second interior surface. The first electrode being located within the first interior portion, and the second electrode being located within and in contact with the second interior portion.

Abstract: A glow discharge tube comprising a gas-sealed envelope, a first electrode, and a second electrode. The gas-sealed envelope defining an interior with an interior surface defining a first interior portion with a first interior surface and a second interior portion with a second interior surface. The first electrode being located within the first interior portion, and the second electrode being located within and in contact with the second interior portion.

Abstract: Various systems and methods are provided for a biased cathode assembly of an X-ray tube with improved thermal management and a method of manufacturing same. In one example, a cathode assembly of an X-ray tube comprises an emitter assembly including an emitter coupled to an emitter support structure, and an electrode assembly including an electrode stack and a plurality of bias electrodes. The emitter assembly including a plurality of independent components that are coupled together. The electrode assembly including a plurality of independent components that are coupled together, and the emitter assembly being coupled to the electrode assembly.

Abstract: Various systems and methods are provided for a biased cathode assembly of an X-ray tube with improved thermal management and a method of manufacturing same. In one example, a cathode assembly of an X-ray tube comprises an emitter assembly including an emitter coupled to an emitter support structure, and an electrode assembly including an electrode stack and a plurality of bias electrodes. The emitter assembly including a plurality of independent components that are coupled together. The electrode assembly including a plurality of independent components that are coupled together, and the emitter assembly being coupled to the electrode assembly.

Abstract: A bidirectional gas discharge tube (GDT) includes a discharge chamber, first and second cathodes, a gas disposed within the discharge chamber, and a control grid. The first and second cathodes are disposed within the discharge chamber and include first and second faces, respectively. The first face and the second face are plane-parallel. The gas is configured to insulate the first cathode from the second cathode. The control grid is disposed between the first and second cathodes within the discharge chamber. The control grid is configured to generate an electric field to initiate establishment of a conductive plasma between the first and second cathodes to close a conduction path extending between the first and second cathodes.

Abstract: According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.

Abstract: Various systems and methods are provided for a biased cathode assembly of an X-ray tube with improved thermal management and a method of manufacturing same. In one example, a cathode assembly of an X-ray tube comprises an emitter assembly including an emitter coupled to an emitter support structure, and an electrode assembly including an electrode stack and a plurality of bias electrodes. The emitter assembly including a plurality of independent components that are coupled together. The electrode assembly including a plurality of independent components that are coupled together, and the emitter assembly being coupled to the electrode assembly.

Abstract: A DC circuit breaker includes a gas discharge tube (GDT) coupled in parallel with an extinguishing path. The GDT conducts and interrupts a load current through a normal current path. The GDT includes a thermionic cathode, an anode, and a control grid. The control grid is configured to regulate opening and closing of the normal current path. The extinguishing path is configured to lengthen a break time for the DC circuit breaker.

Abstract: A DC circuit breaker includes a gas discharge tube (GDT) coupled in parallel with an extinguishing path. The GDT conducts and interrupts a load current through a normal current path. The GDT includes a thermionic cathode, an anode, and a control grid. The control grid is configured to regulate opening and closing of the normal current path. The extinguishing path is configured to lengthen a break time for the DC circuit breaker.

Abstract: A bidirectional gas discharge tube (GDT) includes a discharge chamber, first and second cathodes, a gas disposed within the discharge chamber, and a control grid. The first and second cathodes are disposed within the discharge chamber and include first and second faces, respectively. The first face and the second face are plane-parallel. The gas is configured to insulate the first cathode from the second cathode. The control grid is disposed between the first and second cathodes within the discharge chamber. The control grid is configured to generate an electric field to initiate establishment of a conductive plasma between the first and second cathodes to close a conduction path extending between the first and second cathodes.

Abstract: Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a light source configured to emit light toward at least the first surface such that photons emitted by the light source when the spark gap is operated are incident on the first surface and cause electron emission from the first surface. The light source includes a discharge probe having a third electrode sealed in a tube filled with an inert gas. The spark gap device may not include a radioactive component.

Abstract: A high voltage gas switch includes a gas-tight housing containing an ionizable gas at a preselected gas pressure. The gas switch includes a gas-tight housing containing an ionizable gas at a gas pressure selected based upon a Paschen curve for the ionizable gas, where the Paschen curve plots breakdown voltages of the ionizable gas as a function of gas pressure multiplied by grid-to-anode distance, and where values of gas pressure multiplied by grid-to-anode distance increase over at least a portion of the Paschen curve in conjunction with increasing breakdown voltages. The gas switch also includes an anode disposed within the gas-tight housing, a cathode disposed within the gas-tight housing, and a control grid positioned between the anode and the cathode, where the control grid is spaced apart from the anode by a grid-to-anode distance selected based upon a desired operating voltage.

Abstract: A cold-cathode switching device is presented. The cold-cathode switching device includes a housing defining a chamber; an ionizable gas disposed in the chamber; and a plurality of electrodes disposed in the chamber. The plurality of electrodes includes a cathode and an anode defining a discharge gap, and wherein at least one of the cathode and anode comprises a material that is liquid at an operating temperature of the cathode or the anode.

Abstract: According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.

Abstract: A high voltage gas switch includes a gas-tight housing containing an ionizable gas at a preselected gas pressure. The gas switch includes a gas-tight housing containing an ionizable gas at a gas pressure selected based upon a Paschen curve for the ionizable gas, where the Paschen curve plots breakdown voltages of the ionizable gas as a function of gas pressure multiplied by grid-to-anode distance, and where values of gas pressure multiplied by grid-to-anode distance increase over at least a portion of the Paschen curve in conjunction with increasing breakdown voltages. The gas switch also includes an anode disposed within the gas-tight housing, a cathode disposed within the gas-tight housing, and a control grid positioned between the anode and the cathode, where the control grid is spaced apart from the anode by a grid-to-anode distance selected based upon a desired operating voltage.

Abstract: According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.

Abstract: A gas switch includes an anode and a cathode spaced apart from the anode, wherein the cathode includes a conduction surface. The gas switch also includes a plurality of magnets arranged to generate a magnetic field that defines an annular path over a portion of the conduction surface at a radial distance from a switch axis, and a control grid positioned between the anode and the cathode. In operation, the control grid is arranged to establish a conducting plasma between the anode and the cathode, wherein, in the presence of the conducting plasma, a voltage drop between the anode and the cathode is less than 150 volts, and wherein the conducting plasma forms a cathode spot that circles the annular path.

Abstract: Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a light source configured to emit light toward at least the first surface such that photons emitted by the light source when the spark gap is operated are incident on the first surface and cause electron emission from the first surface. The light source includes a discharge probe having a third electrode sealed in a tube filled with an inert gas. The spark gap device may not include a radioactive component.

Abstract: An approach is disclosed for generating seed electrons at a spark gap in the absence of 85Kr. The present approach utilizes the photo-electric effect, using a light source with a specific nominal wave length (or range of wavelengths) at a specific level of emitted flux to generate seed electrons.

Abstract: Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a cantilevered component coupled to the first electrode that is configured to generate a field emission, a corona discharge or both, to emit light toward at least the first surface such that photons are incident on the first surface and cause electron emission from the first surface. The spark gap device may not include a radioactive component.