Abstract: Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.

Abstract: Systems and methods for forming a time-average line image are disclosed. The method includes forming a line image with a first amount of intensity non-uniformity. The method also includes forming and scanning a secondary image over at least a portion of the line image to form a time-averaged modified line image having a second amount of intensity non-uniformity that is less than the first amount. Wafer emissivity is measured in real time to control the intensity of the secondary image. Temperature is also measured in real time based on the wafer emissivity and reflectivity of the secondary image, and can be used to control the intensity of the secondary image.

Abstract: Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.

Abstract: Systems and methods for forming a time-average line image are disclosed. The method includes forming a line image with a first amount of intensity non-uniformity. The method also includes forming and scanning a secondary image over at least a portion of the line image to form a time-averaged modified line image having a second amount of intensity non-uniformity that is less than the first amount. Wafer emissivity is measured in real time to control the intensity of the secondary image. Temperature is also measured in real time based on the wafer emissivity and reflectivity of the secondary image, and can be used to control the intensity of the secondary image.

Abstract: Systems and methods for forming a time-averaged line image having a relatively high amount of intensity uniformity along its length is disclosed. The method includes forming at an image plane a line image having a first amount of intensity non-uniformity in a long-axis direction and forming a secondary image that at least partially overlaps the primary image. The method also includes scanning the secondary image over at least a portion of the primary image and in the long-axis direction according to a scan profile to form a time-average modified line image having a second amount of intensity non-uniformity in the long-axis direction that is less than the first amount. For laser annealing a semiconductor wafer, the amount of line-image overlap for adjacent scans of a wafer scan path is substantially reduced, thereby increasing wafer throughput.

Abstract: Methods and systems for suppressing the electromagnetic interference (EMI) signature generated by a QKD station are disclosed. One of the methods includes generating two or more modulator drive signals corresponding to two or more of the n possible modulator states of the particular QKD protocol. The modulator drive signals are sent to a random number generation (RNG) unit, which randomly selects one of the two or more modulator drive signals and passes it to the modulator. Another method involves generating two modulator drive signals, wherein the voltage sum is constant. One signal is sent to the modulator while the other is sent to a circuit-terminating element, which can be a second modulator. The method suppresses the EMI signature associated with individual modulation states. This prevents an eavesdropper from gaining information about the modulator states via the EMI signature, which information could otherwise yield information about the exchanged key.

Abstract: Systems and methods that allow for transmitting qubits and classical signal over the same channel of an optical telecommunications network that includes an optical fiber. The method includes sending the qubits of wavelength ?S over a quantum optical path that includes the optical fiber during a time interval ?T0 when there are no classical optical signals of wavelength ?S traveling over the optical fiber. The method also includes sending the classical signals over a classical optical path that includes the optical fiber, wherein the classical signals are sent outside of the time interval ?T0 to avoid interfering with the qubit transmission. Systems and methods for using the present invention to form quantum key banks for encrypting classical signals sent over the optical telecommunications network are also disclosed.

Abstract: A compact work light that generates a light beam having high brightness and high illumination uniformity is disclosed. The work light includes a housing that houses a light source, a light homogenizer and an imaging lens in an operational relationship. The housing is attached to an adjustable mount, which can be attached to a fixed region such as wall, or to a movable support member such as a lamp base. The light source generates light that is uniformized by the light homogenizer. The homogenized light is then imaged by the imaging lens as a highly uniform, bright beam spot having a sharp boundary. The beam spot is formed at a selectable distance from the work light by varying the imaging lens and/or the adjustable mount. The work light is useful for a variety of industrial, professional and personal applications, including but not limited to a reading light, a dentist light, a head lamp, a head light and an optical projector.

Abstract: A compact work light that generates a light beam having high brightness and high illumination uniformity is disclosed. The work light includes a housing that houses a light source, a light homogenizer and an imaging lens in an operational relationship. The housing is attached to an adjustable mount, which can be attached to a fixed region such as wall, or to a movable support member such as a lamp base. The light source generates light that is uniformized by the light homogenizer. The homogenized light is then imaged by the imaging lens as a highly uniform, bright beam spot having a sharp boundary. The beam spot is formed at a selectable distance from the work light by varying the imaging lens and/or the adjustable mount. The work light is useful for a variety of industrial, professional and personal applications, including but not limited to a reading light, a dentist light, a head lamp, a head light and an optical projector.