Abstract: A structure and method for achieving burn-in and full functional testing of a semiconductor wire bond die are provided. The structure comprises an electrical conductor which connects a wire bond pad to a solderable test contact laterally displaced from the wire bond pad. The solderable test contact is configured to facilitate electrical connection of an external testing device thereto for electrical testing and/or burn-in of integrated circuitry associated with the die, without direct physical contact to the wire bond pads. The structure does not need to be removed following the burn-in or test.

Abstract: In a reactive ion plating process utilizing radio frequency power, the rate of evaporation of a noble metal such as ruthenium or iridium, the rate of evaporation of a valve metal such as titanium, and the partial oxygen pressure are adjusted to produce electrically conductive mixed metal oxide ceramic coating on a valve metal substrate. The noble metal constitutes 10-20 percent of the metal atoms in the coating. The coated substrate can sustain 150 amperes per square meter of exposed coating surface in fresh water electrolyte for at least 20 hours, and preferably at least 75 hours, without an excessive increase in the voltage level required to maintain that current density.