Abstract: A method is provided for selectively metallizing one or more three-dimensional materials in an electronic circuit package comprising the steps of forming a layer of seeding solution on a surface of the three-dimensional material of interest, exposing this layer to light of appropriate wavelength, resulting in the formation of metal seed on regions of the three-dimensional material corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper.

Abstract: A method is provided for selectively metallizing one or more three-dimensional materials in an electronic circuit package comprising the steps of forming a layer of seeding solution on a surface of the three-dimensional material of interest, exposing this layer to light of appropriate wavelength, resulting in the formation of metal seed on regions of the three-dimensional material corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper.

Abstract: A method is provided for selectively metallizing one or more three-dimensional materials in an electronic circuit package comprising the steps of forming a layer of seeding solution on a surface of the three-dimensional material of interest, exposing this layer to light of appropriate wavelength, resulting in the formation of metal seed on regions of the three-dimensional material corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper.

Abstract: The total organic content (TOC) of an aqueous composition is reduced to 200 ppm or less by subjecting the composition to electrolysis whereby the pH of the composition at the start of the electrolysis is about 1.8 to about 7 to thereby electrolytically decompose organic materials contained in the aqueous composition.