Abstract: A device and method are described for defining a region on a wall of a semiconductor structure, such as a sidewall of a trench formed in a semiconductor substrate. The method includes the steps of forming a vertical structure above the semiconductor structure and spaced parallel to the wall; providing within the vertical structure an area of one of transparence, reflection or refraction; and projecting light at a given angle to the wall, wherein only a portion of the light passes the vertical structure via the area provided therein to impinge upon the wall of the semiconductor structure, and thereby define the region on the wall. As an alternative, the area can comprise an aperture in the vertical structure such that the vertical structure can be employed as a mask to direct selective ion implantation of the wall.

Abstract: A method and system for finding and setting the illumination in a projection imaging system to achieve optimum imaging. The global optimum illumination is found based on the desired characteristics of the image irradiance distribution as embodied in a target aerial image. The system employs an optimization algorithm that finds the best combination of projected mask images, each such image formed by directing source illumination to selected regions (e.g., pixels) in the entrance pupil (each such region location and size corresponding to a nominal illumination direction and a particular range of angles about the nominal). The optimum illumination is defined as that illumination which produces an aerial image closest to the predefined target aerial image. The system then sets the illuminator to produce the source distribution necessary to achieve this optimal illumination.

Abstract: A device and method are described for defining a region on a wall of a semiconductor structure, such as a sidewall of a trench formed in a semiconductor substrate. The method includes the steps of forming a vertical structure above the semiconductor structure and spaced parallel to the wall; providing within the vertical structure an area of one of transparence, reflection or refraction; and projecting light at a given angle to the wall, wherein only a portion of the light passes the vertical structure via the area provided therein to impinge upon the wall of the semiconductor structure, and thereby define the region on the wall. As an alternative, the area can comprise an aperture in the vertical structure such that the vertical structure can be employed as a mask to direct selective ion implantation of the wall.