Patents by Inventor Joseph F. Aubuchon
Joseph F. Aubuchon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11791136Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate.Type: GrantFiled: April 26, 2021Date of Patent: October 17, 2023Assignee: Applied Materials, Inc.Inventors: Sanjeev Baluja, Yi Yang, Truong Nguyen, Nattaworn Boss Nunta, Joseph F. Aubuchon, Tuan Anh Nguyen, Karthik Janakiraman
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Patent number: 11670489Abstract: Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.Type: GrantFiled: June 17, 2021Date of Patent: June 6, 2023Assignee: Applied Materials, Inc.Inventors: Joseph F. AuBuchon, James Carducci, Larry D. Elizaga, Richard C. Fovell, Philip Allan Kraus, Thai Cheng Chua
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Publication number: 20210313153Abstract: Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.Type: ApplicationFiled: June 17, 2021Publication date: October 7, 2021Inventors: Joseph F. AuBuchon, James Carducci, Larry D. Elizaga, Richard C. Fovell, Philip Allan Kraus, Thai Cheng Chua
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Publication number: 20210249230Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate.Type: ApplicationFiled: April 26, 2021Publication date: August 12, 2021Inventors: Sanjeev BALUJA, Yi YANG, Truong NGUYEN, Nattaworn Boss NUNTA, Joseph F. AUBUCHON, Tuan Anh NGUYEN, Karthik JANAKIRAMAN
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Patent number: 11049694Abstract: Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.Type: GrantFiled: September 27, 2019Date of Patent: June 29, 2021Assignee: Applied Materials, Inc.Inventors: Joseph F. AuBuchon, James Carducci, Larry D. Elizaga, Richard C. Fovell, Philip Allan Kraus, Thai Cheng Chua
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Patent number: 11017986Abstract: Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate.Type: GrantFiled: June 6, 2018Date of Patent: May 25, 2021Assignee: Applied Materials, Inc.Inventors: Sanjeev Baluja, Yi Yang, Truong Nguyen, Nattaworn Boss Nunta, Joseph F. Aubuchon, Tuan Anh Nguyen, Karthik Janakiraman
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Publication number: 20210098236Abstract: Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.Type: ApplicationFiled: September 27, 2019Publication date: April 1, 2021Inventors: Joseph F. AuBuchon, James Carducci, Larry D. Elizaga, Richard C. Fovell, Philip Allan Kraus, Thai Cheng Chua
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Patent number: 10249479Abstract: Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.Type: GrantFiled: December 31, 2015Date of Patent: April 2, 2019Assignee: Applied Materials, Inc.Inventors: Joseph F. Aubuchon, Tza-Jing Gung, Travis Lee Koh, Nattaworn Boss Nunta, Sheng-Chin Kung, Steven Lane, Kartik Ramaswamy, Yang Yang
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Publication number: 20180350562Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate.Type: ApplicationFiled: June 6, 2018Publication date: December 6, 2018Inventors: Sanjeev BALUJA, Yi YANG, Truong NGUYEN, Nattaworn NUNTAWORANUCH, Joseph F. AUBUCHON, Tuan Anh NGUYEN, Karthik JANAKIRAMAN
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Patent number: 10115566Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.Type: GrantFiled: February 21, 2017Date of Patent: October 30, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Steven Lane, Tza-Jing Gung, Kartik Ramaswamy, Travis Koh, Joseph F. Aubuchon, Yang Yang
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Publication number: 20180294144Abstract: Implementations of the disclosure relate to a processing system. In one implementation, the processing system includes a lid, a gas distribution plate disposed below the lid, the gas distribution plate having through holes arranged across the diameter of the gas distribution plate, a pedestal disposed below the gas distribution plate, the pedestal and the gas distribution plate defining a plasma excitation region therebetween, a first RPS unit having a first gas outlet coupled to a first gas inlet disposed at the lid, the first gas outlet being in fluid communication with the plasma excitation region, and a second RPS unit having a second gas outlet coupled to a second gas inlet disposed at the lid, wherein the second gas outlet is in fluid communication with the plasma excitation region, and the second RPS unit has an ion filter disposed between the second gas outlet and the second gas inlet.Type: ApplicationFiled: March 29, 2018Publication date: October 11, 2018Inventors: Joseph F. AUBUCHON, Nattaworn NUNTAWORANUCH, Yi YANG, Truong NGUYEN, Karthik JANAKIRAMAN, Sanjeev BALUJA
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Patent number: 9779953Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.Type: GrantFiled: September 19, 2014Date of Patent: October 3, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Joseph F. Aubuchon, Tza-Jing Gung, Samer Banna
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Publication number: 20170162365Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.Type: ApplicationFiled: February 21, 2017Publication date: June 8, 2017Inventors: STEVEN LANE, TZA-JING GUNG, KARTIK RAMASWAMY, TRAVIS KOH, JOSEPH F. AUBUCHON, YANG YANG
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Patent number: 9659751Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.Type: GrantFiled: July 25, 2014Date of Patent: May 23, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Kartik Ramaswamy, Yang Yang, Steven Lane, Lawrence Wong, Joseph F. Aubuchon, Travis Koh
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Patent number: 9613783Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.Type: GrantFiled: July 24, 2014Date of Patent: April 4, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Steven Lane, Tza-Jing Gung, Kartik Ramaswamy, Travis Koh, Joseph F. Aubuchon, Yang Yang
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Patent number: 9418890Abstract: Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).Type: GrantFiled: May 15, 2014Date of Patent: August 16, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Paul Ma, Joseph F. Aubuchon, Jiang Lu, Mei Chang
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Publication number: 20160225590Abstract: Embodiments described herein generally relate to plasma process apparatus. In one embodiment, the plasma process apparatus includes a plasma source assembly. The plasma source assembly may include a first coil, a second coil surrounding the first coil, and a magnetic device disposed outside the first and inside the second coil. The magnet enables additional tuning which improves uniformity control of the processes on the substrate.Type: ApplicationFiled: December 31, 2015Publication date: August 4, 2016Inventors: Joseph F. Aubuchon, Tza-Jing Gung, Travis Lee Koh, Nattaworn Nuntaworanuch, Sheng-Chin Kung, Steven Lane, Kartik Ramaswamy, Yang Yang
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Publication number: 20160027613Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos ?) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos ?) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos ? coil ring is disposed concentrically about the inner electromagnetic cos ? coil ring.Type: ApplicationFiled: July 24, 2014Publication date: January 28, 2016Inventors: STEVEN LANE, TZA-JING GUNG, KARTIK RAMASWAMY, TRAVIS KOH, JOSEPH F. AUBUCHON, YANG YANG
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Publication number: 20160027616Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.Type: ApplicationFiled: July 25, 2014Publication date: January 28, 2016Inventors: KARTIK RAMASWAMY, YANG YANG, STEVEN LANE, LAWRENCE WONG, JOSEPH F. AUBUCHON, TRAVIS KOH
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Patent number: 9209074Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.Type: GrantFiled: May 20, 2015Date of Patent: December 8, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Jiang Lu, Hyoung-Chan Ha, Paul F. Ma, Seshadri Ganguli, Joseph F. Aubuchon, Sang-ho Yu, Murali K. Narasimhan