Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: The channel-plugging of porous ceramic honeycombs to provide wall flow filter bodies therefrom is carried out using water-based cements comprising ceramic powders and soluble alkali metal silicates; the cements form durable plugs that are resistant to thermal and chemical damage upon drying and without firing.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300–1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300–1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 &OHgr;-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: Composite cordierite honeycomb structures especially suitable for diesel exhaust filtration applications comprise a non-oxide polycrystalline phase constituting 10-70% by weight, with the remainder of the ceramic material constituting a cordierite phase, the non-oxide polycrystalline phase being selected from the group consisting of carbides, nitrides, and borides. Preferably the non-oxide phase is either polycrystalline silicon carbide or polycrystalline silicon nitride and has a particle aspect ratio of less than 3. Inventive ceramic bodies are porous with an open porosity of at least 30%, preferably between 40% and 60%, and a median pore size of at least 5 micrometers, more preferably greater than 8 micrometers and less than 12 micrometers.

Abstract: A process for forming a silicon carbide structure includes molding by compression a mixture of a silicon precursor powder and a cross-linking thermoset resin to form a rigid structure, carbonizing the rigid structure, and forming a silicon carbide structure by heating the carbonized rigid structure at a temperature sufficient to allow carbon and silicon in the structure to react to form silicon carbide.

Abstract: Composite cordierite honeycomb structures especially suitable for diesel exhaust filtration applications comprise a non-oxide polycrystalline phase constituting 10-70% by weight, with the remainder of the ceramic material constituting a cordierite phase, the non-oxide polycrystalline phase being selected from the group consisting of carbides, nitrides, and borides. Preferably the non-oxide phase is either polycrystalline silicon carbide or polycrystalline silicon nitride and has a particle aspect ratio of less than 3. Inventive ceramic bodies are porous with an open porosity of at least 30%, preferably between 40% and 60%, and a median pore size of at least 5 micrometers, more preferably greater than 8 micrometers and less than 12 micrometers.

Abstract: A process for forming a silicon carbide structure includes molding by compression a mixture of a silicon precursor powder and a cross-linking thermoset resin to form a rigid structure, carbonizing the rigid structure, and forming a silicon carbide structure by heating the carbonized rigid structure at a temperature sufficient to allow carbon and silicon in the structure to react to form silicon carbide.

Abstract: A silicon carbide honeycomb body is made by shaping a plasticizable raw material batch mixture containing powdered silicon metal, a water soluble crosslinking thermoset resin, a powdered silicon-containing filler, a water soluble thermoplastic binder, and water into a green honeycomb body, and thereafter drying, curing and sintering the green body at a temperature sufficient to convert the green body to a porous silicon carbide sintered body.

Abstract: A plasticizable raw material batch mixture for forming a silicon carbide honeycomb structure comprising the following components: (1) powdered silicon metal; (2) a carbon precursor comprising a water soluble crosslinking thermoset resin having a viscosity of less than about 1000 centipoise (cp), and preferably less than about 500 cp; (3) a powdered silicon-containing filler; and, (4) a water soluble thermoplastic binder. Optionally, the batch mixture can include either, or both, an organic fibrous filler and a pore-forming filler comprising either a graphitic or a thermoplastic pore-forming filler.

Abstract: An electrode for deionization of water is made of a continuous activated carbon structure. The activated carbon is derived from a synthetic carbon precursor. The structure has openings, inlet and outlet ends such that water entering the inlet end passes through the openings and exits through the outlet end, a conductive coating on at least part of the outer surface of the structure, and a metal wire in contact with the structure. A deionization system is made up of the electrodes in series so that the outlet end of one electrode is next to the inlet end of the nearest downstream electrode. The metal wire of each electrode is connected to a power source to deliver the opposite charge as the charge delivered to its neighboring electrodes. Each of the electrodes is fixedly attached to and sealed within a housing with an air and moisture-tight seal. Openings in the housing between the electrodes, allow air to be removed before use.

Abstract: A method for making an activated carbon composite which involves providing a crosslinkable resin and a support material which is wettable by the resin. The support material can be cotton, chopped wood, sisal, non-fugitive material, and combinations of these. The support is contacted with the resin; and the resin and support material are dried. The resin and support material are then shaped, the resin is cured, and the resin and any carbonizable material are carbonized. The carbon is then activated to produce the product composite. An activated carbon composite produced by the above described method in which the carbon is in the form of a continuous structure reinforced by and uniformly distributed throughout non-fugitive support material.

Abstract: A composite including an inorganic substrate having an outer surface from which pores extend into the substrate and a coating extending over the substrate's outer surface as a substantially uninterrupted layer of carbon. The coating penetrates into the pores of the inorganic substrate. The composite can be made by a process including the steps of contacting an inorganic substrate with a coating and impregnating liquid consisting essentially or wholly of a carbon precursor liquid, treating the inorganic substrate under conditions effective to cure substantially the carbon precursor liquid, and heating the inorganic substrate under conditions effective to convert substantially the cured carbon precursor liquid to carbon.

Abstract: An activated carbon body having flow-through channels and method of making the body. The method involves combining and shaping channel-forming material and optionally fugitive pore-forming material and non-fugitive support material, and a crosslinkable resin into a green body and curing the resin. The temperature at which the channel-forming material begins to distort is greater than the curing temperature of the resin. The resin is carbonized and at the same time the channel-forming material is vaporized out to form a carbon body having flow through channels in the configuration of the fugitive material. The carbon body is then activated. Among other shapes the channels can be straight, curved or crisscrossed.