Abstract: A buffer comprises a memory array, a write circuit and a read circuit. The memory array comprises one or more memory banks. Each of the memory banks is made up of a plurality of memory cells. Each memory cell has one read port and one write port. The write circuit stores a first variable number of data items to the one or more memory banks by utilizing the one write port of a portion of the memory cells. The read circuit reads a second variable number of data outputs from the one or more memory banks by utilizing the one read port of a portion of the memory cells. At least of portion of the plurality of memory cells may include one or more additional write ports which are not used for writing the first variable number of data inputs to the one or more memory banks, and at least of portion of the plurality of memory cells may include one or more additional read ports which are not used for reading the second variable number of data outputs from the one or more memory banks.

Abstract: A multi-port register contains a plurality of cells each capable of storing at least two states. The cells contain at least one read and one write port. Each read port contains a corresponding read enable line, a read data line, and a read transistor stack. Each write port contains a corresponding write enable line, write data line, and a write transistor stack. The read data line is coupled to a pre-charge circuit that charges the read data line to a pre-determined threshold level prior to reading the contents of the cell. The read transistor stack couples the output of the cell to the corresponding read data line such that the read data line is pulled to ground when the cell stores a first logic state, and the read data line retains the pre-determined voltage state when the cell stores the second logic state.

Abstract: A multi-port register contains a plurality of cells each capable of storing at least two states. The cells contain at least one read and one write port. Each read port contains a corresponding read enable line, a read data line, and a read transistor stack. Each write port contains a corresponding write enable line, write data line, and a write transistor stack. The read data line is coupled to a pre-charge circuit that charges the read data line to a predetermined threshold level prior to reading the contents of the cell. The read transistor stack couples the output of the cell to the corresponding read data line such that the read data line is pulled to ground when the cell stores a first logic state, and the read data line retains the pre-determined voltage state when the cell stores the second logic state.