Abstract: A method for making metal gate MOS capacitors with standard silicon gates processes, including the steps of providing a semiconductor substrate and defining active areas and capacitor areas therein, forming field oxide regions that generally surround the active areas and the capacitor areas, forming a gate oxide layer over the active areas and the capacitor areas, and forming polysilicon gates over the active areas. Highly doped source and drain regions in the active areas and highly doped bottom capacitor plate regions in the capacitor areas are then formed, and blanket oxide layer is deposited over the semiconductor structure. The capacitor areas are opened to expose the highly doped bottom capacitor plate regions, and the semiconductor structure is heated to reflow the deposited oxide layer and to grow a capacitor oxide layer over the exposed capacitor areas.

Abstract: A method of forming CMOS transistors with self-aligned field regions. First and second spaced apart areas are provided on a silicon substrate. A masking member is formed protecting the first of said areas and exposing the second. The exposed area is doped with a p-type material which is driven in to form a p-well. The same region is again doped with additional p-type material after which the CMOS transistors are fabricated.