Abstract: A nozzle assembly includes a sleeve defining a pathway, the sleeve disposed within a nacelle. The pathway and an internal surface of the nacelle guides a mass flow from an engine to an exit of the propulsion system. The sleeve is configured to move between a forward position an aft position within the nacelle aft of the engine. The sleeve has a protruding portion that extends towards a center of the pathway and that defines a smallest internal diameter of the sleeve. The sleeve includes a plurality of sleeve segments that are longitudinally aligned and circumferentially arranged to form the sleeve. The sleeve segments are configured to move circumferentially closer as the sleeve moves in a first direction within the nacelle and to move circumferentially further apart as the sleeve moves in a second direction within the nacelle. An actuator is coupled with, and is configured to move the sleeve.

Abstract: A golf putting aid is provided. The golf putting aid includes a body, a first arm, and a second arm. The body has a substantially flat top and bottom surface and includes a front side, a rear side, a first side, and a second side. The rear side includes a straight edge. The first arm protrudes from the front side at the first side of the body, and the second arm protrudes from the front side at the second side of the body. The first arm 16 and the second arm form a slot in between sized to receive a golf ball within.

Abstract: A golf training device used to place the putter square to the golf ball and or target at address. The device consists of a straight back edge roughly the same length as a putter head. An open slot starts from the front going through the center of the device to a point where the ball sets at the same distance from the putter as the back of the device at address. The ball sets into the device at a straight line to the hole or target when placed into the slot of the device. If the golf ball is struck with the putter head parallel to the back of the device, and the slot is straight to the hole or target, the path of the ball to the hole or target will be straight. This improves grip and stance at address giving a true path to the hole or target as well as topspin from missing the device for a better roll.

Abstract: A manufacturing method, in which two device bars are bonded prior to facet coating to form a stacked bar pair. In one embodiment, each of the device bars has a p-side and an n-side, each side having a plurality of bonding pads, with at least some bonding pads located at the p-side of the first device bar adapted for mating with the corresponding bonding pads located at the p-side of the second device bar. Solder material deposited onto the p-side bonding pads adapted for mating is liquefied in a reflow oven, wherein surface tension of the liquefied solder self-aligns the device bars with respect to each other and keeps them in alignment until the solder is solidified to form a solder bond between the mated bonding pads. Two or more instances of the bonded bar pair are further stacked such that bonding pads located at the n-sides of adjacent bar pairs are mated in a relatively tight fit.

Abstract: One embodiment of the invention is a portable electronic device having a screen block, a stand block, and hinge pivotally connecting the screen block to the stand block. The screen block has an obverse surface with a main screen. The hinge is located near one of the top, left, and right surfaces of the screen block and the corresponding surface of the stand block, and enables the portable electronic device to be in one or more closed configurations and one or more hands-free viewing configurations. The portable electronic device is adapted for handheld use and hands-free viewing, wherein it has the bottom surfaces of the screen block and the stand block resting on a substantially horizontal surface. Embodiments provide enhancements such as better hands-free viewing stability, rotating screen images, and additional features.

Abstract: A laser assembly comprises a substrate, one or more standoffs and a semiconductor laser. The substrate has a first doped region and a second doped region. The second doped region is proximate to an upper surface of the substrate and forms a pn junction with the first doped region. The semiconductor laser is operative to emit light from an upper surface and a lower surface. Moreover, the semiconductor laser is attached to the upper surface of the substrate with the one or more standoffs such that the light emitted from the lower surface of the semiconductor laser impinges on the second doped region.

Abstract: An optical assembly comprises a first semiconductor optical device and a second semiconductor optical device. The first and second semiconductor optical devices may, for example, be laser diodes or light-emitting diodes. In addition, the optical assembly includes an active cooling device that is in thermal contact with the first and second semiconductor optical devices. Advantageously, the active cooling device is operative to regulate the temperatures of both the first and second semiconductor optical devices.

Abstract: A manufacturing method, in which two device bars are bonded prior to facet coating to form a stacked bar pair. In one embodiment, each of the device bars has a p-side and an n-side, each side having a plurality of bonding pads, with at least some bonding pads located at the p-side of the first device bar adapted for mating with the corresponding bonding pads located at the p-side of the second device bar. Solder material deposited onto the p-side bonding pads adapted for mating is liquefied in a reflow oven, wherein surface tension of the liquefied solder self-aligns the device bars with respect to each other and keeps them in alignment until the solder is solidified to form a solder bond between the mated bonding pads. Two or more instances of the bonded bar pair are further stacked such that bonding pads located at the n-sides of adjacent bar pairs are mated in a relatively tight fit.

Abstract: A method for performing a wire-bonding operation in an integrated circuit utilizes a bonding tool. A wire is bonded to a first bond site in the integrated circuit, and terminated at a second bond site in the integrated circuit. The bonding and terminating steps are repeated for a plurality of additional wire bonds of the integrated circuit. At least two wire bonds in the integrated circuit are substantially perpendicular to one another at a crossing point in a plan view of the integrated circuit.

Abstract: An integrated circuit device is provided having a substrate, at least one integrated circuit element and a leadframe. The integrated circuit element and the leadframe are disposed on the substrate. The leadframe has at least one lead and at least one encapsulant dam disposed on the at least one lead. The encapsulant dam has at least one chamfered edge to provide clearance for a wire feed during a wire-bonding process.

Abstract: Devices such as amplifiers are built on a heat sink having a perimeter wall surrounding active electronic devices. Surprisingly formation of wire bonds to such devices tends to be degraded if they have an aspect ratio greater than 2:1. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height.

Abstract: Device packages often include walls build on a heat sink that surrounds a device die that thermally interacts with the heat sink. Use of raised or depressed feature on said heat sink that contacts the walls improves the cohesiveness of the package. By appropriately positioning these features contaminant infusion into the package is improved without degrading cohesiveness.

Abstract: An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

Abstract: The specification describes a technique for die bonding that is tailored to air cavity plastic packages for high power devices. The die bonding method is simple and effective, and eliminates the step of placement of solder preforms in the die bonding operation. According to the invention the die that are to be attached are pre-coated with AuSn solder. A multifunctional bonding layer is applied between the silicon die and the AuSn bonding layer. The multifunctional bonding layer comprises a multi-layer structure including Ti/Pt/Au. The chip support member comprises copper or a copper alloy. The chip support member may also be pre-coated with a bonding layer. The pre-coated die is soldered to the chip support member.

Abstract: An integrated circuit comprises an integrated circuit package and a plurality of circuit elements disposed within the integrated circuit package. A plurality of wire bonds provide connections for at least one of the circuit elements. At least one wire bond in a first subset of wire bonds and at least one wire bond in a second subset of wire bonds are substantially perpendicular to one another at a crossing point of the wire bonds in a plan view of the integrated circuit.

Abstract: Power transistor devices and techniques for reducing bowing in such devices are provided. In one aspect, a power transistor device is provided. The power transistor device comprises a substrate, a device film formed on the substrate and an adhesion layer formed on a side of the substrate opposite the device film, wherein at least a portion of the adhesion layer is at least partially segmented. The power transistor device thereby exhibits a reduced amount of bowing relative to an amount of bowing expected without the segmenting of the adhesion layer. The power transistor device may be part of an integrated circuit.

Abstract: A method for attaching at least one IC die to a non-ceramic IC package including a leadframe and a base, the IC package being configured for receiving the at least one IC die, includes attaching the IC die to an upper surface of a thermal carrier in a manner which facilitates thermal transfer between the die and the carrier. The method further includes attaching the thermal carrier having the IC die attached thereto to an upper surface of the base of the IC package. In this manner, one or more IC dies may be attached to a standard plastic IC package without a significant impact on thermal transfer in the device and at a significant cost savings compared to ceramic IC packages.

Abstract: An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

Abstract: A semiconductor device includes a substrate and an active region formed in the substrate proximate an upper surface of the substrate. The active region includes at least one circuit element formed therein. At least one channel is formed in a back surface of the substrate opposite the upper surface of the substrate, the channel being formed proximate the active region. The channel is substantially filled with one or more layers of a thermally conductive material and configured so as to provide a thermal conduction path for conducting heat away from the active region.