Abstract: Certain exemplary embodiments can provide a system comprising a schoollock-mount coupleable to a doorframe of a door; a schoollock-pin slidably coupleable to the schoollock-mount; a schoollock-arm slidably coupleable to the schoollock-pin; and a schoollock-door-latch. The schoollock-door-latch is coupleable to the door via the one or more apertures.

Abstract: Certain exemplary embodiments can provide a system comprising a schoollock-mount coupleable to a doorframe of a door; a schoollock-pin slidably coupleable to the schoollock-mount; a schoollock-arm slidably coupleable to the schoollock-pin; and a schoollock-door-latch. The schoollock-door-latch is coupleable to the door via the one or more apertures.

Abstract: A male incontinency device for men is disclosed which is convenient, efficient, easy to wear, and which allows no leakage. The male incontinency device comprises a gasket having an elastomeric structure with a hole in the center which fits around the genitals, a gasket retainer which surrounds and secures the gasket, a modified pair of briefs to secure the retainer, and a urine collection bag having the ability to collect and store urine, wherein an opening of the urine collection bag is secured to and around one rim of the gasket retainer.

Abstract: The method of making a pressure sensor formed of semiconductor material on an insulating support, i.e., as a semiconductor-on-silicon, is described. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.

Abstract: The pressure sensor is formed of semiconductor material which is formed on insulating support, i.e., as a semiconductor-on-silicon. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.