Abstract: A personal care cosmetic composition; its method of manufacture; and its method of use are disclosed.

Abstract: A TSV of a first semiconductor die may extend from a semiconductor substrate of the first semiconductor die through at least one metallization layer of the die to connect to a metallization layer to supply power to the second semiconductor die. By extending the TSV, resistance may be reduced, allowing for enhanced power delivery to the second semiconductor die. Resistance may be further reduced by allowing for the TSV to connect to a thicker metallization layer than would otherwise be possible. Also, in some embodiments, the TSV may connect to a metallization layer that is suitable for supplying power to both semiconductor dies. The first semiconductor die may be a top die or a bottom die in a face-to-face arrangement. Disclosed concepts may be extended to any number of dies included in a die stack that includes the face-to-face arrangement.

Abstract: Systems and methods are disclosed for operating a head-mounted display system based on user perceptibility. The display system may be an augmented reality display system configured to provide virtual content on a plurality of depth planes by presenting the content with different amounts of wavefront divergence. Some embodiments include obtaining an image captured by an imaging device of the display system. Whether a threshold measure or more of motion blur is determined to be exhibited in one or more regions of the image. Based on a determination that the threshold measure or more of motion blur is exhibited in one or more regions of the image, one or more operating parameters of the wearable display are adjusted. Example operating parameter adjustments comprise adjusting the depth plane on which content is presented (e.g., by switching from a first depth plane to a second depth plane), adjusting a rendering quality, and adjusting power characteristics of the system.

Abstract: A platform for a cemetery lowering device comprising: a base having a tapered edge, a non-skid surface, an opening for a casket to be lowered through the base, a first beam and a second beam attached to the base on one side of the opening, and a third beam and a fourth beam attached to the base on another side of the opening.

Abstract: In accordance with the disclosure, an inductor may be formed over a semiconductor substrate of one or both dies in a face-to-face die arrangement while reducing the parasitic capacitance between the inductor and the adjacent die. In disclosed embodiments, a semiconductor device may include a void (e.g., an air gap) between the inductor and the adjacent die to reduce the parasitic capacitance between the inductor and the adjacent die. The void may be formed in the die that includes the inductor and/or the adjacent die. In some respects, the void may be etched in interface layers (e.g., comprising bump pads and dielectric material) between the semiconductor dies, and may extend along the length of the inductor.

Abstract: In accordance with the disclosure, one or both semiconductor dies in a face-to-face arrangement may include a probe pad layer formed on a face of the die to allow the die to be individually tested prior to assembly of the dies. Thus, faulty dies may be discarded individually so they are not included in a composite semiconductor device, thereby increasing device yields. The probe pad layer also allows dies to be matched so that a composite semiconductor device achieves desired performance, which may further increase device yields. In some embodiments, the probe pads of the probe pad layer formed on the face of the die may be used to individually test the die, and may remain inactive, or inert, during operation of the composite semiconductor device.

Abstract: In accordance with the disclosure, an inductor may be formed over a semiconductor substrate of one or both dies in a face-to-face die arrangement while reducing the parasitic capacitance between the inductor and the adjacent die. In disclosed embodiments, a semiconductor device may include a void (e.g., an air gap) between the inductor and the adjacent die to reduce the parasitic capacitance between the inductor and the adjacent die. The void may be formed in the die that includes the inductor and/or the adjacent die. In some respects, the void may be etched in interface layers (e.g., comprising bump pads and dielectric material) between the semiconductor dies, and may extend along the length of the inductor.

Abstract: A boat mooring system utilizing a cylinder having an internal spring-like mechanism that allows a retaining rope to lengthen or shorten automatically to adjust for rising tide or high wind to retain a boat at a safe distance from a dock or pier.

Abstract: A boat mooring system utilizing a cylinder having an internal spring-like mechanism that allows a retaining rope to lengthen or shorten automatically to adjust for rising tide or high wind to retain a boat at a safe distance from a dock or pier.

Abstract: A platform for a cemetery lowering device comprising a one-piece base, a first beam and a second beam. The one-piece base having a tapered edge, a non-skid surface, and an opening for a casket to be lowered through the base. The first beam attached to the one-piece base on one side of the opening and a second beam attached to the one-piece base on another side of the opening.

Abstract: A TSV of a first semiconductor die may extend from a semiconductor substrate of the first semiconductor die through at least one metallization layer of the die to connect to a metallization layer to supply power to the second semiconductor die. By extending the TSV, resistance may be reduced, allowing for enhanced power delivery to the second semiconductor die. Resistance may be further reduced by allowing for the TSV to connect to a thicker metallization layer than would otherwise be possible. Also, in some embodiments, the TSV may connect to a metallization layer that is suitable for supplying power to both semiconductor dies. The first semiconductor die may be a top die or a bottom die in a face-to-face arrangement. Disclosed concepts may be extended to any number of dies included in a die stack that includes the face-to-face arrangement.

Abstract: A TSV of a first semiconductor die may extend from a semiconductor substrate of the first semiconductor die through at least one metallization layer of the die to connect to a metallization layer to supply power to the second semiconductor die. By extending the TSV, resistance may be reduced, allowing for enhanced power delivery to the second semiconductor die. Resistance may be further reduced by allowing for the TSV to connect to a thicker metallization layer than would otherwise be possible. Also, in some embodiments, the TSV may connect to a metallization layer that is suitable for supplying power to both semiconductor dies. The first semiconductor die may be a top die or a bottom die in a face-to-face arrangement. Disclosed concepts may be extended to any number of dies included in a die stack that includes the face-to-face arrangement.

Abstract: A personal care cosmetic composition; its method of manufacture; and its method of use are disclosed.

Abstract: In accordance with the disclosure, one or both semiconductor dies in a face-to-face arrangement may include a probe pad layer formed on a face of the die to allow the die to be individually tested prior to assembly of the dies. Thus, faulty dies may be discarded individually so they are not included in a composite semiconductor device, thereby increasing device yields. The probe pad layer also allows dies to be matched so that a composite semiconductor device achieves desired performance, which may further increase device yields. In some embodiments, the probe pads of the probe pad layer formed on the face of the die may be used to individually test the die, and may remain inactive, or inert, during operation of the composite semiconductor device.

Abstract: In accordance with the disclosure, an inductor may be formed over a semiconductor substrate of one or both dies in a face-to-face die arrangement while reducing the parasitic capacitance between the inductor and the adjacent die. In disclosed embodiments, a semiconductor device may include a void (e.g., an air gap) between the inductor and the adjacent die to reduce the parasitic capacitance between the inductor and the adjacent die. The void may be formed in the die that includes the inductor and/or the adjacent die. In some respects, the void may be etched in interface layers (e.g., comprising bump pads and dielectric material) between the semiconductor dies, and may extend along the length of the inductor.

Abstract: A TSV of a first semiconductor die may extend from a semiconductor substrate of the first semiconductor die through at least one metallization layer of the die to connect to a metallization layer to supply power to the second semiconductor die. By extending the TSV, resistance may be reduced, allowing for enhanced power delivery to the second semiconductor die. Resistance may be further reduced by allowing for the TSV to connect to a thicker metallization layer than would otherwise be possible. Also, in some embodiments, the TSV may connect to a metallization layer that is suitable for supplying power to both semiconductor dies. The first semiconductor die may be a top die or a bottom die in a face-to-face arrangement. Disclosed concepts may be extended to any number of dies included in a die stack that includes the face-to-face arrangement.

Abstract: A platform for a cemetery lowering device comprising: a base having a tapered edge, a non-skid surface, an opening for a casket to be lowered through the base, a first beam and a second beam attached to the base on one side of the opening, and a third beam and a fourth beam attached to the base on another side of the opening.

Abstract: A platform for a cemetery lowering device comprising a one-piece base, a first beam and a second beam. The one-piece base having a tapered edge, a non-skid surface, and an opening for a casket to be lowered through the base. The first beam attached to the one-piece base on one side of the opening and a second beam attached to the one-piece base on another side of the opening.

Abstract: A platform for a cemetery lowering device comprising a one-piece base having a tapered edge and a non-skid surface, wherein the one-piece base comprises an opening for a casket to be lowered through the base, a frame and skin, and one or more receptacles for adjustable-height footings. The frame and skin may be formed of a single piece of polymer, fiberglass, or metal. The non-skid surface may comprise grooves. The base may comprise a guide for positioning the cemetery lowering device on the base. The guide is an impression in a surface of the base. The base may comprise a first flange around a perimeter of the opening extending vertically from a top surface of the base. Each one of the receptacles is threaded such that height adjustments of the one of the adjustable-height footings can be performed by rotating the one of the adjustable-height footings.

Abstract: The present invention generally relates to absorbent sanitary articles for absorption of body fluids and in particular to a sanitary article of this type including a buffer composition adapted to adjust the natural pH of the absorbed body fluid to a pH that is compatible with the pH of skin.