Abstract: Systems and methods may be provided for coupling together semiconductor devices. One or more of the semiconductor devices may be provided with an array of bump contacts formed in an etch back process. The bump contacts may be indium bumps. The indium bumps may be formed by depositing a sheet of indium onto a surface of a device substrate, depositing and patterning a layer of photoresist over the indium layer, and selectively etching the indium layer to the surface of the substrate using the patterned photoresist layer to form the indium bumps. The substrate may be an infrared detector substrate. The infrared detector substrate may be coupled to a readout integrated circuit substrate using the bumps.

Abstract: Systems and methods may be provided for coupling together semiconductor devices. One or more of the semiconductor devices may be provided with an array of bump contacts formed in an etch back process. The bump contacts may be indium bumps. The indium bumps may be formed by depositing a sheet of indium onto a surface of a device substrate, depositing and patterning a layer of photoresist over the indium layer, and selectively etching the indium layer to the surface of the substrate using the patterned photoresist layer to form the indium bumps. The substrate may be an infrared detector substrate. The infrared detector substrate may be coupled to a readout integrated circuit substrate using the bumps.

Abstract: A microbolometer is disclosed, including a bottom dielectric of a bridge structure; a detector layer disposed above the bottom dielectric, the detector layer comprised of a metal-doped vanadium pentaoxide material; and a top dielectric disposed above the detector layer.

Abstract: A microbolometer is disclosed, including a bottom dielectric of a bridge structure; a detector layer disposed above the bottom dielectric, the detector layer comprised of a metal-doped vanadium pentaoxide material; and a top dielectric disposed above the detector layer.

Abstract: Systems and methods are disclosed for forming interconnects between semiconductor devices in accordance with one or more embodiments of the present invention. For example, a method of forming interconnects between semiconductor devices includes depositing a plurality of first contacts on a plurality of corresponding first pads of a first semiconductor device; forming a plurality of plated contacts on a plurality of corresponding second pads of a second semiconductor device; aligning the plurality of first contacts with the plurality of plated contacts; and joining the plurality of first contacts to the plurality of plated contacts to form the interconnects between the first semiconductor device and the second semiconductor device.