Abstract: The present disclosure provides a thermally conductive article including a pad having first and second opposed major surfaces and a thickness therebetween. The thickness is formed of entangled thermally conductive fibers and at least a portion of the entangled thermally conductive fibers have at least one terminal end at the first opposed major surface, the opposed second major surface, or both. The pad is at least partially impregnated with a polymer. Another thermally conductive article is provided including a) a pad having first and second opposed major surfaces and a thickness therebetween; b) a first thermally conductive skin layer; and c) a second thermally conductive skin layer. The thickness of the pad is formed of aligned thermally conductive fibers, and at least a portion of the thermally conductive fibers have a terminal end at the first opposed major surface and the opposed second major surface.

Abstract: Disclosed herein is a golf club head that comprises a strike face. The strike face has a central region, defined by a forty millimeter by twenty millimeter rectangular area centered on a center of the strike face and elongated in a heel-to-toe direction. Within the central region, the strike face has a characteristic time (CT) of no more than 257 microseconds. Within the central region, no less than 25% of the strike face has a coefficient of restitution (COR) of at least 0.8. Within the central region, no less than 60% of the strike face has a CT of at least 235 microseconds. Within the central region, no less than 35% of the strike face has a CT of at least 240 microseconds.

Abstract: The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: (1) a Silicon Carbide substrate, (2) a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon Carbide substrate; and (3) at least one separation plug formed in the Silicon semiconductor material. The single bonding layer, or either layer of the double bonding layer, is selected from the group consisting of: {a Silicon dioxide layer; a Silicon layer; a carbon layer; a Silicon germanium (SiGe) layer; a tungsten silicide layer; a titanium suicide layer; and a cobalt silicide layer}. The separation plug extends from the top surface of the Silicon semiconductor material into the Silicon Carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the Silicon semiconductor material.

Abstract: A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (D) at least one horizontal drain extension region of a second conductivity type and having a horizontal drain extension dopant concentration; (E) a step drain region formed in the silicon semiconductor material, and contacting the horizontal drain extension region; (F) a body region of the first conductivity type and having a body region dopant concentration; (G) a source region of the second conductivity type and having a source region dopant concentration; (H) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the horizontal drain extension region, the shield plate being adjacent and parallel to the horizontal drain extens

Abstract: A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

Abstract: A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (3) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (4) a channel region of a second conductivity type and having a channel dopant concentration; (5) a drain region of the second conductivity type and having a drain dopant concentration greater than the channel region dopant concentration; (6) a body of the first conductivity type and having a body region dopant concentration; (7) a source region of the second conductivity type and having a source region dopant concentration; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and wherein the shield plate extends above the top

Abstract: The present invention discloses and claims the silicon carbide based silicon structure comprising: (1) a silicon carbide substrate, (2) a silicon semiconductor material having a top surface, and either bonded to the silicon carbide substrate via the bonding layer, or epitaxially grown on the silicon carbide substrate; and (3) at least one separation plug formed in the silicon semiconductor material. The separation plug extends from the top surface of the silicon semiconductor material into the silicon carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the silicon semiconductor material.

Abstract: A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region of the first conductivity type formed completely within the silicon semiconductor material including a channel dopant concentration; (e) a drain region of the second conductivity type formed in the silicon semiconductor material and contacting the channel region; (f) a body region of the first conductivity type and having a body region dopant concentration formed in the silicon semiconductor material under the conductive gate region; (g) a source region of the second conductivity type and having a source region dopant concentration formed in the silicon semiconductor material within the body region; (h) a shield plate region being adjacent and being pa

Abstract: A modular poultry automatic injection and spraying apparatus (10) featuring a dual-sensor switch means (41) and a dual-action, fluid-actuated drive means (101) is disclosed. The apparatus has a casing construction (11) including an upper housing (12) mounted on a lower housing (13) such that the lower housing (13), which contains water-sensitive pneumatic logic circuitry (261), can be easily removed prior to cleaning. The casing construction (11) has the additional advantage of allowing substitute upper and lower housings (12, 13) to be interchanged during maintenance and repair. The dual sensor switch means (41) ensures that the injections are performed accurately and consistently. The dual-action, fluid-actuated drive means (101) allows for the simultaneous injection and spraying functions of the apparatus (10) obviating the need for an additional apparatus or separate compressed air signal.

Abstract: The present invention relates to a pistol grip fishing pole stand. The pistol grip fishing pole stand includes a frame means which is designed to be inserted into the ground and provide support for the pistol grip fishing pole stand. The stand also includes a receptacle therewith which is adapted to receive and engage the pistol grip shaped handle of a fishing pole. The pistol grip fishing pole stand permits a fisherman to fish without having to hold a fishing pole.

Abstract: Chemiluminescent mixtures utilize mono and di-alkyl substituted 9,10-bis(phenylethynyl)anthracene derivatives to provide higher chemiluminescence efficiencies. The preferred fluorescers are 2-ethyl-9,10-bis(phenylethynyl)anthracene and 1,4-dimethyl-9,10-bis(phenylethynyl)anthracene.

Abstract: Catalysts for low temperature hydrogen peroxide/oxalate ester fluorescer miluminescent systems are disclosed. Lithium carboxylic said salt catalysts which lower the activation energy of the reaction and also reduce the temperature dependence of the light emission process are preferred.

Abstract: The base-to-emitter bias voltage and current of a high frequency transistor, operating class AB or class A, is derived from a semiconductive bias device consisting of a semiconductive diode junction fed with current from a constant current source to derive a V.sub.BE voltage thereacross which is the bias source voltage. This source voltage is applied across the base-to-emitter junction of the RF transistor via the intermediary of a positive temperature coefficient silicon resistor. The diode and silicon resistor are packaged together for mounting on a heat sink common to the transistor, whereby the transistor is compensated for temperature dependent changes in V.sub.BE and h.sub.FE.

Abstract: A disposable, pre-gel body electrode for short term use has a self-contained electrolyte gel-impregnated pad therein sealed with a cap which minimizes electrolyte dry-out.

Abstract: 1,1,4,4-Tetrakis(trifluoromethyl)butan-1,4-diol and 1,1-bis (trifluoromethyl)propanol-1 are prepared by reacting gaseous hexafluoroacetone and ethane in a transparent container in the presence of sunlight. The diol is a crystalline solid and the propanol-1 is a liquid. The diol is useful as a monomer in the field of polymer chemistry. That is, polymers such as polyurethans and polyesters which find many applications in the chemical industry can be made by reacting the proper material with the diol of this invention. The propanol-1 is useful as a plasticizer for polyurethans and other plastics.

Abstract: In a radio frequency transistor package, a layer of metallization is deposited on an electrically insulative thermally conductive ceramic substrate member serving as a heat sink. An insular region of the metallization serves as a pad for receiving a transistor die with the collector region of the transistor bonded to the insular region of metallization. The region of the metallization surrounding the pad comprises a ground plane. An apertured ceramic insulative spacer is bonded over the ground plane metallization with the aperture in registration over the transistor. Input, output and a pair of common lead metal strips are bonded to the upper surface of the spacer in generally coplanar configuration. The two common leads extend across the spacer adjacent opposite sides of the aperture in generally tangential relation thereto. The input and output leads are disposed in between the common leads and are interrupted by the central aperture in the spacer.