Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: An engine control strategy for a marine vessel propulsion system receives a request for a gear from among plural transmission gears, determines an engine speed for the requested transmission gear shift, adjusts the engine to the determined speed for a predetermined amount of time, and prevents the requested transmission gear shift from occurring for the predetermined amount of time while maintaining the engine at the predetermined speed. After the predetermined amount of time elapses, the requested shift is allowed to occur.

Abstract: An engine control strategy for a marine vessel propulsion system receives a request for a gear from among plural transmission gears, determines an engine speed for the requested transmission gear shift, adjusts the engine to the determined speed for a predetermined amount of time, and prevents the requested transmission gear shift from occurring for the predetermined amount of time while maintaining the engine at the predetermined speed. After the predetermined amount of time elapses, the requested shift is allowed to occur.

Abstract: An engine control strategy for a marine vessel propulsion system receives a request for a gear from among plural transmission gears, determines an engine speed for the requested transmission gear shift, adjusts the engine to the determined speed for a predetermined amount of time, and prevents the requested transmission gear shift from occurring for the predetermined amount of time while maintaining the engine at the predetermined speed. After the predetermined amount of time elapses, the requested shift is allowed to occur.

Abstract: An engine control strategy for a marine vessel propulsion system receives a request for a gear from among plural transmission gears, determines an engine speed for the requested transmission gear shift, adjusts the engine to the determined speed for a predetermined amount of time, and prevents the requested transmission gear shift from occurring for the predetermined amount of time while maintaining the engine at the predetermined speed. After the predetermined amount of time elapses, the requested shift is allowed to occur.

Abstract: A gridless drop ceiling assembly having ledger boards mounted on opposing longitudinal walls of a room and extending the length of the opposing longitudinal walls, the ledger boards being mounted proximate to the height of the desired drop ceiling and in parallel relationship, a plurality of mounting studs positioned on the ledger boards, the mounted studs extending outwardly from the surface of the ledger boards, the mounting studs on opposing ledger boards being in aligned relationship, a plurality of ceiling beams generally rectangular in cross section having parallel upper and lower surfaces and parallel side surfaces and parallel opposing end surfaces, the ceiling beams dimensioned to the distance between the ledger boards, the ceiling beams having formed in the opposing end surfaces thereof an L-shaped slot in communication with one surface of the ceiling beam, the L-shaped slot having a depth at least equal to the height of the mounting stud on the ledger board for the slidable positioning of and locki

Abstract: A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.

Abstract: A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2.5 by counterdoping a P-type doped polycrystalline line with an N-type dopant.

Abstract: The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.

Abstract: A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.