Abstract: A method for the pre-treatment of a wafer substrates with exposed metal surfaces is disclosed. The pre-treatment reduces oxidation of the exposed metal surfaces during subsequent supercritical cleaning processes.

Abstract: The system includes a metrology module coupled to a supercritical processing chamber, and the method includes positioning a substrate on a substrate holder in a metrology chamber, measuring a residue in at least one feature of the substrate, determining a supercritical cleaning process recipe based on the measured residue, positioning the substrate on a substrate holder in a supercritical processing chamber coupled to the metrology chamber, cleaning the substrate with a supercritical fluid using the determined supercritical cleaning process recipe, and removing the substrate from the supercritical processing chamber. The method may further include re-positioning the substrate in the metrology chamber, and measuring any remaining residue in at least one feature of the substrate.

Abstract: A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

Abstract: A method for the pre-treatment of a wafer substrates with exposed metal surfaces is disclosed. The pre-treatment reduces oxidation of the exposed metal surfaces during subsequent supercritical cleaning processes.

Abstract: A method of and apparatus for treating a substrate to remove porogens and/or porogen residues form a dielectric layer using a processing chamber operating at a supercritical state is disclosed. In addition, other supercritical processes can be performed before and/or after the removal process.

Abstract: An apparatus for removing a residue from a surface of an object located on a support region within a processing chamber is disclosed. The apparatus comprises means for performing a dual-pressure rinsing process and means for performing a series of decompression cycles. The means for performing a dual-pressure rinsing process comprises: means for pressurizing the processing chamber to a first pressure; means for introducing a rinsing chemistry into the processing chamber; means for recirculating the rinsing chemistry within the processing chamber for a first period of time; means for increasing a pressure of the processing chamber to a second pressure; and means for recirculating the rinsing chemistry within the processing chamber for a second period of time.

Abstract: An apparatus for removing a residue from a surface of an object located on a support region within a processing chamber is disclosed. The apparatus comprises means for performing a dual-pressure cleaning process and means for performing a rinsing process. The means for performing a dual-pressure cleaning process comprises: means for pressurizing the processing chamber to a first pressure; means for introducing a cleaning chemistry into the processing chamber; means for recirculating the cleaning chemistry within the processing chamber for a first period of time; means for increasing a pressure of the processing chamber to a second pressure; and means for recirculating the cleaning chemistry within the processing chamber for a second period of time.

Abstract: A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry.

Abstract: A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

Abstract: A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

Abstract: Method and apparatus for holding a wafer having a wafer dimension during processing, the vacuum chuck comprising a concave wafer platen configured force the wafer into intimate contact with the wafer platen and provide a seal therebetween when high pressure is applied to the wafer. The wafer platen for preventing matter from entering between the wafer and vacuum chuck. A groove configured in the wafer platen applies vacuum to the underside of the wafer. A plenum configured in the platen provides pressure for a predetermined amount of time between the wafer and the vacuum chuck to disengage the wafer.

Abstract: An apparatus for closing a chamber, the chamber having a first chamber housing and a second chamber housing, is disclosed. The apparatus comprises a means for forming a chamber including a means for bringing the first chamber housing into contact with the second chamber housing; and a deforming means for preventing formation of particles while the first chamber housing contacts the second chamber housing, wherein the deforming means is mounted on at least one of the first chamber housing and the second chamber housing such that it deforms to accommodate any misalignment while the means for forming a chamber operates.

Abstract: A method is disclosed for decontaminating a supercritical processing apparatus and/or wafers after a wafer cleaning step. In accordance the embodiments of the invention, a supercritical cleaning step utilizes a surfactant to clean a wafer and uses a supercritical rinse solution in a post-cleaning step to decontaminate the supercritical processing apparatus, the wafer or both from processing residues. In accordance with further embodiments of the invention, supercritical rinse solutions are used to cure processing surfaces of the supercritical processing apparatus after the supercritical processing apparatus is serviced or when replacement parts are installed.

Abstract: Apparatus and method of processing a substrate comprises positioning a substrate within a processing space of a processing chamber, and depositing a material layer, such as a titanium-containing layer, onto the substrate using plasma-enhanced chemical vapor deposition. The substrate is then removed from the processing chamber and the processing space is purged. A gas mixture containing oxygen is then introduced into the processing space and the gas mixture is excited with RF energy to form an oxygen-containing plasma. The oxygen-containing plasma is sustained for a predetermined amount of time in the processing space.