Abstract: A system to perform marine surveying may include a pair of identical design autonomous marine survey vehicles configured for coordinated operations. The vehicles may navigate and transit from a launch location to a geographically distant designated survey location, continuously survey and transit to a designated recovery location. A pair of vehicles may operate interchangeably at the sea surface, semi-submerged and underwater. Each may generate energy when operating at the surface and store energy in a rechargeable battery to power vehicle operation. The payload may include a sensor system to acquire seabed sensor data. A data storage system may store the sensor data. An on-board payload quality control system may analyze data validity. Positioning when the vehicle is collecting seabed sensor data may be determined with high precision, to provide survey data of high precision.

Abstract: A liquefaction system is capable of sequentially or simultaneously liquefying multiple feed streams of hydrocarbons having different normal bubble points with minimal flash. The liquefying heat exchanger has separate circuits for handling multiple feed streams. The feed stream with the lowest normal boiling point is sub-cooled sufficiently to suppress most of the flash. Feed streams with relatively high normal boiling points are cooled to substantially the same temperature, then blended with bypass streams to maintain each product near its normal bubble point. The system can also liquefy one stream at a time by using a dedicated circuit or by allocating the same feed to multiple circuits.

Abstract: A liquefaction system is capable of sequentially or simultaneously liquefying multiple feed streams of hydrocarbons having different normal bubble points with minimal flash. The liquefying heat exchanger has separate circuits for handling multiple feed streams. The feed stream with the lowest normal boiling point is sub-cooled sufficiently to suppress most of the flash. Feed streams with relatively high normal boiling points are cooled to substantially the same temperature, then blended with bypass streams to maintain each product near its normal bubble point. The system can also liquefy one stream at a time by using a dedicated circuit or by allocating the same feed to multiple circuits.

Abstract: A liquefaction system is capable of sequentially or simultaneously liquefying multiple feed streams of hydrocarbons having different normal bubble points with minimal flash. The liquefying heat exchanger has separate circuits for handling multiple feed streams. The feed stream with the lowest normal boiling point is sub-cooled sufficiently to suppress most of the flash. Feed streams with relatively high normal boiling points are cooled to substantially the same temperature, then blended with bypass streams to maintain each product near its normal bubble point. The system can also liquefy one stream at a time by using a dedicated circuit or by allocating the same feed to multiple circuits.

Abstract: An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.

Abstract: A liquefaction system is capable of sequentially or simultaneously liquefying multiple feed streams of hydrocarbons having different normal bubble points with minimal flash. The liquefying heat exchanger has separate circuits for handling multiple feed streams. The feed stream with the lowest normal boiling point is sub-cooled sufficiently to suppress most of the flash. Feed streams with relatively high normal boiling points are cooled to substantially the same temperature, then blended with bypass streams to maintain each product near its normal bubble point. The system can also liquefy one stream at a time by using a dedicated circuit or by allocating the same feed to multiple circuits.

Abstract: An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.

Abstract: The present invention is directed to a process for producing a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The process either comprises exposing the wafer's front and back surfaces to different atmospheres, or thermally annealing two wafers in a face-to-face arrangement.

Abstract: The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.

Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, having an axially symmetric vacancy dominated region and an axially symmetric silicon self-interstitial dominated region. Both the vacancy dominated and the silicon self-interstitial dominated regions are substantially free of agglomerated intrinsic point defects. The vacancy dominated region has a radial width of at least 15 mm and/or includes the central axis and the silicon self-interstitial dominated region is annular in shape and extends radially outward from the vacancy dominated region to the peripheral edge of the ingot or wafer. In ingot form, the axially symmetric regions have an axial length which is at least 20% of the length of the constant diameter portion of the ingot.

Abstract: The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process comprises controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. In ingot form, the axially symmetric region has a width, as measured from the circumferential edge of the ingot radially toward the central axis, which is at least about 30% the length of the radius of the ingot. The axially symmetric region additionally has a length, as measured along the central axis, which is at least about 20% the length of the constant diameter portion of the ingot.

Abstract: The present invention is directed to a silicon wafer which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, may form an ideal, non-uniform depth distribution of oxygen precipitates and may additionally contain an axially symmetric region which is substantially free of agglomerated intrinsic point defects.