Abstract: A sputtering apparatus is constructed in modular form to facilitate changes in sputtering processes and target materials. At least two sputtering modules and a pumping stack module are arranged in series and in any desired order between a load module and an exit module. Each module is attached to another module by sealingly abutting flanges which are connected by externally accessible bolts. The use of gate valves between the modules is avoided by the provision of connecting sleeves which are each at least as long as the mean free path of the sputtered target atoms.

Abstract: A vacuum chamber is provided for sputter deposition of a semiconductor homojunction. A target made of a semiconductor compound containing at least one non-metallic element is provided. A substrate for receiving the sputtered species from the target to form sequential layers of deposited semiconductor material is also provided. An electric field is provided between the target and the substrate. An inert gas is introduced sequentially at a plurality of discrete partial pressures to adjust the incident energy of the sputtered species by thermalization, for altering the mean free path of the sputtered and incident species to control the ratio of non-metallic to metallic elements in the deposited semiconductor material and create a plurality of different semiconductor material layers.

Abstract: The method of applying ohmic contacts to a semiconductor, such as a silicon body or wafer used in solar cells, by the use of arc plasma spraying, and solar cells resulting therefrom.

Abstract: Selective absorber including a layer of semiconductor applied by arc plasma spraying over a metallic surface.