Patents by Inventor Joseph John Sumakeris
Joseph John Sumakeris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9903046Abstract: Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer.Type: GrantFiled: May 8, 2007Date of Patent: February 27, 2018Assignee: Cree, Inc.Inventors: Michael John O'Loughlin, Joseph John Sumakeris
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Patent number: 9155131Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.Type: GrantFiled: May 15, 2008Date of Patent: October 6, 2015Assignee: Cree, Inc.Inventors: Joseph John Sumakeris, Michael James Paisley
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Patent number: 8430960Abstract: Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber.Type: GrantFiled: August 29, 2006Date of Patent: April 30, 2013Assignee: Cree, Inc.Inventors: Joseph John Sumakeris, Michael James Paisley, Michael John O'Loughlin
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Publication number: 20120052660Abstract: A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.Type: ApplicationFiled: November 7, 2011Publication date: March 1, 2012Applicant: CREE, INC.Inventors: Joseph John SUMAKERIS, Michael James PAISLEY, Michael John O'LOUGHLIN
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Patent number: 8052794Abstract: A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.Type: GrantFiled: September 12, 2005Date of Patent: November 8, 2011Assignee: The United States of America as represented by the Secretary of the NavyInventors: Joseph John Sumakeris, Michael James Paisley, Michael John O'Loughlin
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Publication number: 20090136686Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.Type: ApplicationFiled: May 15, 2008Publication date: May 28, 2009Inventors: Joseph John Sumakeris, Michael James Paisley
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Patent number: 7390367Abstract: A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.Type: GrantFiled: November 14, 2003Date of Patent: June 24, 2008Assignee: Cree, Inc.Inventors: Joseph John Sumakeris, Michael James Paisley
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Publication number: 20080127894Abstract: A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.Type: ApplicationFiled: November 14, 2003Publication date: June 5, 2008Inventors: Joseph John Sumakeris, Michael James Paisley
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Patent number: 7279115Abstract: A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide substrate with a nonselective etch to remove both surface and subsurface damage, thereafter etching the same surface with a selective etch to thereby develop etch-generated structures from at least any basal plane dislocation reaching the substrate surface that will thereafter tend to either terminate or propagate as threading defects during subsequent epilayer growth on the substrate surface, and thereafter growing a first epitaxial layer of silicon carbide on the twice-etched surface.Type: GrantFiled: March 27, 2006Date of Patent: October 9, 2007Assignee: Cree, Inc.Inventor: Joseph John Sumakeris
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Patent number: 7230274Abstract: Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer.Type: GrantFiled: March 1, 2004Date of Patent: June 12, 2007Assignee: Cree, IncInventors: Michael John O'Loughlin, Joseph John Sumakeris
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Patent number: 7226805Abstract: An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.Type: GrantFiled: June 22, 2006Date of Patent: June 5, 2007Assignee: Cree, Inc.Inventors: Christer Hallin, Heinz Lendenmann, Joseph John Sumakeris
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Patent number: 7118781Abstract: A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.Type: GrantFiled: April 16, 2003Date of Patent: October 10, 2006Assignee: Cree, Inc.Inventors: Joseph John Sumakeris, Michael James Paisley, Michael John O'Loughlin
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Patent number: 7109521Abstract: An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.Type: GrantFiled: August 30, 2004Date of Patent: September 19, 2006Assignee: Cree, Inc.Inventors: Christer Hallin, Heinz Lendenmann, Joseph John Sumakeris
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Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
Patent number: 7018554Abstract: A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide substrate with a nonselective etch to remove both surface and sub-surface damage, thereafter etching the same surface with a selective etch to thereby develop etch-generated structures from at least any basal plane dislocation reaching the substrate surface that will thereafter tend to either terminate or propagate as threading defects during subsequent epilayer growth on the substrate surface, and thereafter growing a first epitaxial layer of silicon carbide on the twice-etched surface.Type: GrantFiled: September 22, 2003Date of Patent: March 28, 2006Assignee: Cree, Inc.Inventor: Joseph John Sumakeris -
Patent number: 6974720Abstract: Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm?3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.Type: GrantFiled: October 16, 2003Date of Patent: December 13, 2005Assignee: Cree, Inc.Inventors: Joseph John Sumakeris, Hudson McDonald Hobgood, Michael James Paisley, Jason Ronald Jenny, Calvin H. Carter, Jr., Valeri Fedorovich Tsvetkov
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Patent number: 6896738Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.Type: GrantFiled: October 30, 2001Date of Patent: May 24, 2005Assignee: Cree, Inc.Inventors: Joseph John Sumakeris, Michael James Paisley
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Patent number: 6797069Abstract: A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.Type: GrantFiled: April 8, 2002Date of Patent: September 28, 2004Assignee: Cree, Inc.Inventors: Michael James Paisley, Joseph John Sumakeris
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Publication number: 20030188687Abstract: A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.Type: ApplicationFiled: April 8, 2002Publication date: October 9, 2003Inventors: Michael James Paisley, Joseph John Sumakeris
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Patent number: 6569250Abstract: A gas driven rotation apparatus includes a base member and a platter. The base member includes an upper surface and a mounting portion formed in the upper surface. The mounting portion includes an inner recess and an annular outer channel surrounding and spaced apart from the inner recess. A plurality of drive channels extend generally radially outwardly from the inner recess to the outer channel. The drive channels are substantially straight. A drive gas entrance passage extends through the base member and has an entrance opening in the inner recess. A drive gas exhaust passage extends through the base member and has an exhaust opening in the outer channel. The platter overlies the mounting portion. The drive channels are arranged and configured such that, when a drive gas flows through the drive channels, the drive gas causes the platter to rotate relative to the base member about an axis of rotation.Type: GrantFiled: January 8, 2001Date of Patent: May 27, 2003Assignee: Cree, Inc.Inventors: Michael Paisley, Joseph John Sumakeris, Olle Kordina
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Publication number: 20030079689Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.Type: ApplicationFiled: October 30, 2001Publication date: May 1, 2003Inventors: Joseph John Sumakeris, Michael James Paisley