Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Abstract: The present disclosure relates to a composition that includes a perovskite of A2BX4, where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R1 includes a first carbon chain having between 2 and 5 carbon atoms, R2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R3 includes a third carbon chain.

Abstract: An aspect of the present disclosure is a method of making a device, wherein the method includes, in order, depositing a layer of a photoresist onto a substrate, depositing a mask onto the photoresist, developing the photoresist, resulting in the forming of a grid having a plurality of cavities, and depositing a semiconductor onto the grid, resulting in substantially filling each cavity with the semiconductor.

Abstract: The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX3 and a second layer that includes a perovskite-like material defined by at least one of A?2B?X?4, A?3B?2X?9, A?B?X?4, A?2B?X?6, and/or A?2AB?2X?7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A? is a third cation, B? is a fourth cation, X? is a second anion, and A? is different than A.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: An aspect of the present disclosure is a method that includes combining a first organic salt (A1X1), a first metal salt (M1(X2)2), a second organic salt (A2X3), a second metal salt (M2Cl2), and a solvent to form a primary solution, where A1X1 and M1(X2)2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A2X3 to M2Cl2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A1 or A2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: Described herein are spin polarized light emitting diodes (LEDs) and methods of making the same. Spin polarization is achieved via chiral induced spin selectivity where, for example, a stereochemically active cation is included in a perovskite to form the conductive layer of an LED device. Advantageously, the devices and methods described herein allow for spin polarization at room temperature and without application of a magnetic field or ferromagnetic contacts, in contrast to other described spin selective LEDs.

Abstract: The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.

Abstract: The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX3 and a second layer that includes a perovskite-like material defined by at least one of A?2B?X?4, A?3B?2X?9, A?B?X?4, A?2B?X?6, and/or A?2AB?2X?7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A? is a third cation, B? is a fourth cation, X? is a second anion, and A? is different than A.

Abstract: The present disclosure relates to a method that includes positioning a stack that includes at least one of the following layers between a first surface and a second surface: a first perovskite layer and/or a second perovskite layer; and treating the stack for a period of time by at least one of heating the stack or pressurizing the stack, where a device that includes the first surface and the second surface provides the heating and the pressurizing of the stack.

Abstract: The present disclosure relates to a composition that includes a perovskite of A2BX4, where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R1 includes a first carbon chain having between 2 and 5 carbon atoms, R2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R3 includes a third carbon chain.

Abstract: The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

Abstract: The present application discloses devices that include a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Abstract: The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

Abstract: An aspect of the present disclosure is a method that includes combining a first organic salt (A1X1), a first metal salt (M1(X2)2), a second organic salt (A2X3), a second metal salt (M2Cl2), and a solvent to form a primary solution, where A1X1 and M1(X2)2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A2X3 to M2Cl2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A1 or A2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

Abstract: The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.