Abstract: Techniques produce integrated native metal oxide discrete elements which can be used to fabricate discrete dynode electron multiplier (DDEM) devices, for example by creating dynodes with a native oxide as secondary electron emissive (SEE) layer from a metal block. The metal block may comprise or consist of a metal base component, for example Al, Al alloys or BeCu, of metal oxide SEE materials Al2O3 or BeO. Growing a native oxide from these base metals, Al2O3 or BeO eliminates the need of a costly and time-consuming SEE coating on the dynode surface. Furthermore, aluminum alloys offer intrinsic dopant, in particular magnesium where its oxide provides a higher secondary electron yield than the aluminum oxide. The use of aluminum, its alloys or BeCu material block allows flexibility in design and fabrication of DDEM without an SEE coating process.

Abstract: Techniques produce integrated native metal oxide discrete elements which can be used to fabricate discrete dynode electron multiplier (DDEM) devices, for example by creating dynodes with a native oxide as secondary electron emissive (SEE) layer from a metal block. The metal block may comprise or consist of a metal base component, for example Al, Al alloys or BeCu, of metal oxide SEE materials Al2O3 or BeO. Growing a native oxide from these base metals, Al2O3 or BeO eliminates the need of a costly and time-consuming SEE coating on the dynode surface. Furthermore, aluminum alloys offer intrinsic dopant, in particular magnesium where its oxide provides a higher secondary electron yield than the aluminum oxide. The use of aluminum, its alloys or BeCu material block allows flexibility in design and fabrication of DDEM without an SEE coating process.

Abstract: A tandem electron multiplier device includes an input end position electron multiplier generating an electron emission; an output end position electron multiplier receiving the electron emission and generating an output electron emission; an electron collector to receive the output electron emission; a power supply; and an electrical biasing network coupled to the power supply, the electrical biasing network supplying voltages to connections at the input end position electron multiplier and the output end position electron multiplier, the voltages supplied to provide output current linearly with respect to input current across the tandem electron multiplier device.