Patents by Inventor Joseph KAPLUN

Joseph KAPLUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of production of a structure including a high thermal conductivity substrates and devices on it
    Patent number: 10777429
    Abstract: There may be provided a method for generating a structure, the method may include receiving multiple donor structures that comprise multiple mesas; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: September 15, 2020
    Assignee: ICDAT LTD.
    Inventors: Joseph Kaplun, Adam Hoffman
  • Gallium nitride semiconductor structure and process for fabricating thereof
    Patent number: 10692752
    Abstract: A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: June 23, 2020
    Assignee: ELTA SYSTEMS LTD.
    Inventors: Joseph Kaplun, Bilha Houli Arbiv
  • GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING THEREOF
    Publication number: 20190326162
    Abstract: A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 24, 2019
    Inventors: Joseph KAPLUN, Bilha HOULI ARBIV
  • Gallium nitride semiconductor structure and process for fabricating thereof
    Patent number: 10388752
    Abstract: A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: August 20, 2019
    Assignee: ELTA SYSTEMS LTD.
    Inventors: Joseph Kaplun, Bilha Houli Arbiv
  • METHOD OF PRODUCTION OF A STRUCTURE INCLUDING A HIGH THERMAL CONDUCTIVITY SUBSTRATES AND DEVICES ON IT
    Publication number: 20190157109
    Abstract: There may be provided a method for generating a structure, the method may include receiving multiple donor structures that comprise multiple mesas; placing the multiple donor structures on a substrate that lacks a semiconductor layer that covers the entire substrate; and performing a manufacturing process that comprises coupling the multiple mesas to the substrate.
    Type: Application
    Filed: October 17, 2018
    Publication date: May 23, 2019
    Inventors: JOSEPH KAPLUN, Adam Hoffman
  • GALLIUM NITRIDE SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING THEREOF
    Publication number: 20180366558
    Abstract: A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.
    Type: Application
    Filed: May 2, 2018
    Publication date: December 20, 2018
    Inventors: Joseph KAPLUN, Bilha HOULI ARBIV