Abstract: A 3D printing apparatus and method prints a partial part, and continues to print the part after the partially-printed part has been rotated. Each partial printing operation may include reinforcement via application of one or more layers of continuous fiber. The rotation and continued printing of the partially-printed part allows for fiber orientation in different orientations for the printed part.

Abstract: A pixel for an ambient light and/or color sensor includes a plurality of pinned photodiodes. The pixel also includes a floating diffusion region. A ratio of an active area of the plurality of pinned photodiodes to an area of the floating diffusion region is greater than 150.

Abstract: Systems and methods for measuring quantum states of qubits with more than two levels are provided. A method can include, for a plurality of shuffling sequences, applying, by a quantum computer, one or more quantum gates to the one or more qubits to execute a quantum algorithm; applying, by the quantum computer, a shuffling sequence to the one or more qubits; and measuring, using a readout apparatus, the state of the one or more qubits to determine a readout state. The method can further include determining, by a classical computer or the quantum computer, an average occupation for one or more of the quantum states of the one or more qubits using the readout states for each of the shuffling sequences. The readout states can correspond to a state in a subset of the quantum states of the one or more qubits.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to heat exchangers having tubing with a reduced diameter compared to traditional systems. In one embodiment, a ducted HVAC system comprises an outdoor heat exchanger with tubing that has an outer diameter of eight millimeters (8 mm) or less and an indoor heat exchanger with tubing that has an outer diameter of nine millimeters (9 mm) or less. Additional systems, devices, and methods are also disclosed.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a channel structure extending between a first source/drain region and a second source/drain region. Further, a gate electrode is arranged directly over the channel structures, and an upper interconnect contact is arranged over and coupled to the gate electrode. A backside contact is arranged below and coupled to the first source/drain region. The backside contact has a width that decreases from a bottommost surface of the backside contact to a topmost surface of the backside contact.

Abstract: In an aspect a computer system is configured to: receive accelerated transfer definition data defining one or more conditions for accelerating a transfer; obtain a due date for completing the transfer; initiate the transfer in response to the earlier of: determining that at least one of the conditions for accelerating the transfer have occurred; and determining that a current date is within a defined proximity of the due date for completing the transfer.

Abstract: The present disclosure is directed to performing one or more validity checks on potential trajectories for a device, such as an autonomous vehicle, to navigate. In some examples, a potential trajectory may be validated based on whether it is consistent with a current trajectory the vehicle is navigating such that the potential and current trajectories are not too different, whether the vehicle can feasibly or kinematically navigate to the potential trajectory from a current state, whether the potential trajectory was punctual or received within a time period of a prior trajectory, and/or whether the potential trajectory passes a staleness check, such that it was created within a certain time period. In some examples, determining whether a potential trajectory is feasibly may include updating a set of feasibility limits based on one or more operational characteristics of statuses of subsystems of the vehicle.

Abstract: Fusion proteins, comprising at least one single chain antibody fragment (scFV), and a cancer antigen or marker, or a fragment thereof are provided. The scFV is capable of selectively binding to a cytokine released by chimeric antigen receptor (CAR) expressing cell such as interferon gamma (IFN-?) or tumor necrosis factor alpha (TNF-?). The cancer antigen or marker may comprise the extracellular domain of CD19. Methods for isolating or purifying CAR expressing cells using fusion proteins are provided.

Abstract: A wheel system adapted for use with a guided soft target (GST) is disclosed. The GST includes a soft body that is removably attachable to a dynamic motion element (DME). The wheel system has an axle connected to the soft body and a tire body rotatably connected to the axle. The tire body has an outer surface concentric with and encircling the axle with a ground-contacting tire ridge extending from and encircling the outer surface. The ridge is constructed to contact the ground when the soft body is attached to a DME. The ridge is comprised of a ridge material and has a ridge width, both of which are selected to (1) permit the tire body to slide in a direction parallel to the axle when the tire body is subjected to a lateral force; and (2) rotate the tire body as the DME moves.

Abstract: A method of semiconductor fabrication includes positioning a substrate on a susceptor in a chamber and growing an epitaxial feature on the substrate. The growing includes providing UV radiation to a first region of a surface of the substrate and while providing the UV radiation, growing a first portion of the epitaxial feature on the first region of the surface while concurrently growing a second portion of the epitaxial feature on a second region of the surface of the substrate. The first portion of the epitaxial feature can be greater in thickness than the second portion of the epitaxial feature.

Abstract: A method for filling a gap in a semiconductor structure includes: forming the gap between two raised portions of the semiconductor structure, the gap having a bottom surface and two lateral surfaces each extending upwardly from the bottom surface along one of the raised portions to terminate at an upper surface of a corresponding one of the raised portions; and forming a filler element in the gap in a bottom-up manner that avoids the filler element being formed laterally.

Abstract: Drive mechanism configured for moving a wiper arm, the drive mechanism comprising a support assembly configured to cooperate with a wiper shaft extending according to a primary axis to allow a rotation of the wiper shaft with respect the support assembly according to the primary axis; a rotating assembly configured to be mounted in a rotationally fixed manner with the wiper shaft, the rotating assembly including at least one cylindrical bearing extending according to a secondary axis, the secondary axis being transverse to the primary axis; an inclination adjustment assembly including an inclination shaft configured to be fixed to the wiper arm and to cooperate with the at least one cylindrical bearing so as to be allowed to rotate according to the secondary axis, the inclination adjustment assembly further including a radial pin mounted on the inclination shaft and configured to cooperate with a biasing element of the support assembly.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to heat exchangers having tubing with a reduced diameter compared to traditional systems. In one embodiment, a ducted HVAC system comprises an outdoor heat exchanger with tubing that has an outer diameter of eight millimeters (8 mm) or less and an indoor heat exchanger with tubing that has an outer diameter of nine millimeters (9 mm) or less. Additional systems, devices, and methods are also disclosed.

Abstract: A method includes: applying a first solution to a semiconductor structure of a semiconductor device to form a first coating, the semiconductor structure including a feature and the trench, the first coating being formed in the trench and over the feature, the first solution containing a metal-containing solute; heating the first coating in a multi-step procedure to turn the first coating into a first film, the multi-step procedure including heating at a first temperature, followed by heating at a second temperature not lower than the first temperature; applying a second solution onto the first film to form a second coating, the second solution containing the metal-containing solute; and heating the second coating in a multi-step procedure to turn the second coating into a second film, the multi-step procedure including heating at a third temperature, followed by heating at a fourth temperature not lower than the third temperature.

Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to an HVAC system in which multiple indoor units are coupled to central outdoor unit, where at least one of the indoor units is configured to provide conditioned air through ductwork and at least one indoor unit is configured to provide conditioned air without ductwork. Moreover, a gas furnace can be provided in the system, for harsher environments that benefit from more robust heating. Additional systems, devices, and methods are also disclosed.

Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to an HVAC system in which multiple indoor units are coupled to central outdoor unit, where at least one of the indoor units is configured to provide conditioned air through ductwork and at least one indoor unit is configured to provide conditioned air without ductwork. Moreover, a gas furnace can be provided in the system, for harsher environments that benefit from more robust heating. Additional systems, devices, and methods are also disclosed.

Abstract: This disclosure enables an assembly for driving an arm of a windshield wiper of a vehicle. The assembly includes a support structure in a housing that is secured against rotation relative to the housing. The support structure has an opening with a bearing surface, where the opening is configured to receive a boss of a worm wheel such that the bearing surface faces the boss of the worm wheel.

Abstract: An HVAC system is provided. Embodiments of the present disclosure generally relate to heat exchangers having tubing with a reduced diameter compared to traditional systems. In one embodiment, a ducted HVAC system comprises an outdoor heat exchanger with tubing that has an outer diameter of eight millimeters (8 mm) or less and an indoor heat exchanger with tubing that has an outer diameter of nine millimeters (9 mm) or less. Additional systems, devices, and methods are also disclosed.