Patents by Inventor Joseph L. Shay

Joseph L. Shay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrochromic device
    Patent number: 4340278
    Abstract: Electrochromic devices based on anion transfer have been made. These devices utilize an iridium oxide electrochromic electrode in conjunction with an electrolyte that provides a source of anions with formula weight in the range 18 to 33.
    Type: Grant
    Filed: May 19, 1980
    Date of Patent: July 20, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Gerardo Beni, Catherine E. Rice, Joseph L. Shay
  • Iridium oxide based electrochromic devices
    Patent number: 4258984
    Abstract: Electrochromic devices based on electrochromic iridium oxide electrodes are disclosed. These electrodes are iridium oxide entities produced by vacuum deposition techniques such as by sputtering from an iridium target in the presence of an oxygen atmosphere. All solid state electrochromic devices utilizing such electrodes are possible.
    Type: Grant
    Filed: September 14, 1979
    Date of Patent: March 31, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Gerardo Beni, William C. Dautremont-Smith, Lawrence M. Schiavone, Joseph L. Shay
  • Electrolytic process useful for the electrolysis of water
    Patent number: 4257856
    Abstract: It is possible to significantly increase the efficiency of the electrolysis of water into hydrogen and oxygen while maintaining stability of the anode. This efficiency increase is obtained by using an iridium oxide anode which is produced by vacuum deposition techniques.
    Type: Grant
    Filed: October 17, 1979
    Date of Patent: March 24, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Gerardo Beni, William C. Dautremont-Smith, Lawrence M. Schiavone, Joseph L. Shay
  • Heat treated electrochromic devices
    Patent number: 4201454
    Abstract: Electrochromic devices based on anodic iridium oxide as the electrochromic material have been made. These devices exhibit long term stability, memory, and good response times, e.g., less than 80 msec. for reflectivity changes of about 70% (50 msec. for 50% changes). Devices using an anodic iridium oxide film immersed in a sulfate electrolyte have been operated for more than 6.times.10.sup.5 coloration/bleaching cycles at 0.5 Hz without noticeable change in properties. Response times and stability are also improved by a heat treatment of the anodic iridium oxide at temperatures between 40 and 100 degrees C.
    Type: Grant
    Filed: June 27, 1978
    Date of Patent: May 6, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Gerardo Beni, Joseph L. Shay
  • Semiconductor devices with enhanced properties
    Patent number: 4196263
    Abstract: The voltage produced by a photovolatic device containing a semiconductor layer is enhanced by interfacing the semiconductor material of the device with an additional semiconductor material to form an isotype heterodiode. For example, the solar power conversion efficiency and the voltage produced by an n-CdS layer immersed in an electrolyte is enhanced by interfacing the n-CdS layer with an n-GaAs layer.
    Type: Grant
    Filed: October 13, 1978
    Date of Patent: April 1, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Joseph L. Shay, Sigurd Wagner
  • Iridium oxide based electrochromic devices
    Patent number: 4191453
    Abstract: Electrochromic devices based on anodic iridium oxide as the electrochromic material have been made. These devices exhibit long term stability, memory, and good response times, e.g., less than 80 msec. for reflectivity changes of about 70% (50 msec. for 50% changes). Devices using an anodic iridium oxide film immersed in a sulfate electrolyte have been operated for more than 6.times.10.sup.5 coloration/bleaching cycles at 0.5 Hz without noticeable change in properties. Response times and stability are also improved by a heat treatment of the anodic iridium oxide at temperatures between 40 and 100 degrees C.
    Type: Grant
    Filed: June 27, 1978
    Date of Patent: March 4, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Gerardo Beni, Shimshon Gottesfeld, James D. E. McIntyre, Joseph L. Shay
  • GaAs layers as contacts to thin film semiconductor layers
    Patent number: 4074305
    Abstract: Electrical contact between a conducting substrate, e.g., graphite, and a polycrystalline semiconductor layer of, for example p-type indium phosphide in a semiconductor device is made through a p-type GaAs intermediary layer. The GaAs layer is deposited on the conducting substrate by conventional methods such as chemical vapor deposition. The indium phosphide layer can then be deposited on the GaAs by similar techniques. The specific resistance and blocking voltage of such an interface is typically below 2 .OMEGA.-cm.sup.2 and 50 millivolts respectively. The efficiency of a p-InP/nCdS solar cell containing the improved electrical contact is measurably increased.
    Type: Grant
    Filed: November 16, 1976
    Date of Patent: February 14, 1978
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Wilbur D. Johnston, Jr., Joseph L. Shay