Abstract: A silicon solar energy cell having improved anti-reflective properties and resistance to radiation is composed of a light receiving surface having spaced indentations in the form of inverted pyramids therein. The pyramids, which have their bases in the plane of the light-receiving surface, are produced by masking the surface with a layer resistant to attack by a silicon etchant, forming open regions in the mask, then etching the major surface through the exposed regions.

Abstract: Metal contacts are deposited on a clean surface of a silicon wafer by coating the wafer with a glass during diffusion to form a junction inwardly of the surface, applying a photoresist layer to the glass, phtographing and developing a pattern for the contacts on the photoresist layer, etching out underlying portions of the glass layer, depositing the metal contacts in the voids so created, and then removing the entirety of the photoresist and glass layers.

Abstract: A photovoltaic cell is formed by applying electrical contact material through an antireflective coating on the light receiving surface of the cell by flame, arc or plasma spraying. The cell so formed has a metal contact spaced portions of which are in electrical contact with the light-receiving surface of the cell.

Abstract: A method of producing semicrystalline silicon by heating the silicon to a molten state and gradually cooling the silicon to mitigate disruptions in the silicon continuum and promote semicrystalline growth. The product formed is a silicon body, which may be sliced into wafers having highly ordered grains of a mean diameter of at least about one mm.

Abstract: A method of forming a semicrystalline silicon solar energy cell having individual grains of silicon at the light-receiving surface of the cell. Impurities in the silicon concentrated in the grain boundaries are removed by etching away at least substantial portions of the boundaries at the wafer surface and between adjoining grains so that, upon subsequent diffusion, a photovoltaic junction will be formed at the light-receiving surface and will extend into the interior of the wafer between adjoining grains.

Abstract: A method of purifying silicon, in which the silicon is heated to a molten state, contacted with a gas inert to silicon to remove impurities, and thereafter cooled to a solid state.

Abstract: A method of forming an electrical contact on the surface of a photovoltaic cell in which particles of electrically conductive material are formed at a temperature in excess of the alloying temperature of the material and silicon, and thereafter spraying, e.g., flame spraying, arc spraying, or plasma spraying, the particles to one or both major surfaces of the cell so that the particles alloy with the silicon and adhere to the surface of the cell.

Abstract: A method of producing semicrystalline silicon by heating the silicon to a molten state and gradually cooling the silicon to mitigate disruptions in the silicon continuum and promote semicrystalline growth. The product formed is a silicon body, which may be sliced into wafers having highly ordered grains of a mean diameter of at least about one mm.

Abstract: Yttrium oxide is used as an antireflective coating for photovoltaic cells.

Abstract: A photovoltaic cell is formed by applying electrical contact material through an antireflective coating on the light receiving surface of the cell by flame, arc or plasma spraying. The cell so formed has a metal contact spaced portions of which are in electrical contact with the light-receiving surface of the cell.

Abstract: A semicrystalline silicon solar energy cell formed from individual grains of silicon having portions thereof at the light-receiving surface of the cell. An electrical junction is formed at said light-receiving surface and extends across and below that surface and into and between the boundaries of adjoining grains to an extent such that the total junction area substantially exceeds the product of the linear dimensions of the wafer surface but does not extend completely around the boundaries of the silicon grains or to the opposed surface of the wafer.

Abstract: A method for use in making semiconductor type electrical devices such as solar cells. In the method, a wafer of semiconductor material having two major surfaces is provided, the wafer being doped with an impurity of one conductivity type. A layer of a metal-containing compositions such as aluminum, is placed on one of the major surfaces of the wafer, and the wafer is then heated in the presence of an impurity of the opposite conductivity type to a temperature such that a high-low junction is formed by the metal at one major surface while the impurity of the opposite conductivity type diffuses or penetrates the other major surface to form a p-n junction thereat.

Abstract: A tantalum oxide antireflective coating is applied to a surface of a solar energy cell by depositing a layer of a suboxide of tantalum on the surface and then oxidizing the layer to an oxide approaching Ta.sub.2 O.sub.5.

Abstract: A semicrystalline silicon solar energy cell formed from individual grains of silicon having portions thereof at the light-receiving surface of the cell. An electrical junction is formed at said light-receiving surface and extends across and below that surface and into and between the boundaries of adjoining grains to an extent such that the total junction area substantially exceeds the product of the linear dimensions of the wafer surface but does not extend completely around the boundaries of the silicon grains or to the opposed surface of the wafer.

Abstract: Disclosed is an integrated photovoltaic generator containing a plurality of photovoltaic cells, the generator capable of producing a voltage greater than that generated by a single photovoltaic cell of comparable chemical composition. The generator comprises a wafer of semiconductor material having two major surfaces, at least one of the major surfaces including a plurality of discrete areas containing an impurity of one type of conductivity, at least the portion of the remainder of the wafer contiguous to the areas containing an impurity of an opposite conductivity type, and electrical conductor means between at least one area and the portion of the wafer containing the impurity of the opposite conductivity type.

Abstract: A foraminous sheet of carrier substrate is contacted, by full or partial immersion, with a bath of molten silicon to form a sheet of material in which the foramina are filled with silicon and at least one surface of the sheet is coated with silicon. The coated sheet is suitable for use in forming a photovoltaic cell.

Abstract: A foraminous sheet of carrier substrate is formed by immersing the sheet in a bath of molten silicon. After cooling, the coated sheet is suitable for use in making a photovoltaic cell.

Abstract: A foraminous sheet of carrier substrate is contacted, by full or partial immersion, with a bath of molten silicon to form a sheet of material in which the foramina are filled with silicon and at least one surface of the sheet is coated with silicon. The coated sheet is suitable for use in forming a photovoltaic cell.

Abstract: A silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, which cell has a back surface junction that is discontinuous and has spaced, shorted portions formed therein.