Abstract: A ceramic honeycomb product comprising a thin-walled ceramic honeycomb structure incorporating a plurality of parallel channels bounded by thin channel walls traversing the body from a first end face to a second end face thereof; and a composite coating disposed on at least one end face of the structure comprising a powder of an abrasion-resistant ceramic dispersed in a dried siliceous matrix.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: The channel-plugging of porous ceramic honeycombs to provide wall flow filter bodies therefrom is carried out using water-based cements comprising ceramic powders and soluble alkali metal silicates; the cements form durable plugs that are resistant to thermal and chemical damage upon drying and without firing.

Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 ?-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic.

Abstract: A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.

Abstract: The channel-plugging of porous ceramic honeycombs to provide wall flow filter bodies therefrom is carried out using water-based cements comprising ceramic powders and soluble alkali metal silicates; the cements form durable plugs that are resistant to thermal and chemical damage upon drying and without firing.