Patents by Inventor Joseph Maciejewski

Joseph Maciejewski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Melting massage bar
    Patent number: 11969489
    Abstract: A personal care cosmetic composition; its method of manufacture; and its method of use are disclosed.
    Type: Grant
    Filed: February 11, 2021
    Date of Patent: April 30, 2024
    Assignee: JOHNSON & JOHNSON CONSUMER INC.
    Inventors: Joseph Greco, Jessica Maciejewski, Alexandria Dinapoli Marzano, MaryRose Wagner
  • METHODS OF FORMING A P-TYPE GROUP II-VI SEMICONDUCTOR CRYSTAL LAYER ON A SUBSTRATE
    Publication number: 20070111372
    Abstract: A disclosed method deposits a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer on a zinc oxide (ZnO) substrate having a (002) crystallographic orientation. The method uses a zinc-containing reaction gas supplied to a surface of a heated substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas in a transverse direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Application
    Filed: December 28, 2006
    Publication date: May 17, 2007
    Applicant: CERMET, INC.
    Inventors: Jeffrey Nause, Joseph Maciejewski, Vincente Munne, Shanthi Ganesan
  • Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
    Publication number: 20050020035
    Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Application
    Filed: July 20, 2004
    Publication date: January 27, 2005
    Inventors: Jeffrey Nause, Joseph Maciejewski, Vincente Munne, Shanthi Ganesan