Abstract: A holistic solution for improving the quality of publicly available/published video by providing an improved audio. The owner of the published video or audio content within the published video can upload the improved audio to a network database where it is associated with a video feature in common with the publicly available video. The client consuming the video, can activate a novel application/module/browser extension on a client terminal to detect the video feature of a currently selected video to begin downloading the improved audio. After a significant portion of the audio has been downloaded the invention mutes the audio playback of the video on the client terminal at or about the same time as it begins playback of the audio content so as to minimize distortion from the transition between the original audio and the improved audio. Additional features including audio/video synchronization, selectable audio tracks, visual feedback, and monetization are disclosed.

Abstract: Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F8) and a titanium nitride (TiN) etching chemistry including tetrafluoro methane (CF4). The methods prevent etch rate degradation and exhibit reduced electro-static discharge (ESD) defects.

Abstract: A process for prohibiting amino group transport from the top surface of a layered semiconductor wafer to a photoresist layer introduces a thin film oxynitride over the silicon nitride layer using a high temperature step of nitrous oxide (N2O) plus oxygen (O2) at approximately 300° C. for about 50 to 120 seconds. By oxidizing the silicon nitride layer, the roughness resulting from the adverse affects of amino group transport eliminated. Moreover, this high temperature step, non-plasma process can be used with the more advanced 193 nanometer technology, and is not limited to the 248 nanometer technology. A second method for exposing the silicon nitride layer to an oxidizing ambient, prior to the application of antireflective coating, introduces a mixture of N2H2 and oxygen (O2) ash at a temperature greater than or equal to 250° C. for approximately six minutes. This is followed by an O2 plasma clean and/or an Ozone clean, and then the subsequent layering of the ARC and photoresist.