Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.

Abstract: Patterning effects on a substrate are reduced during radiation-based heating by filtering the radiation source or configuring the radiation source to produce radiation having different spectral characteristics. For the filtering, an optical filter may be used to truncate specific wavelengths of the radiation. The different configurations of the radiation source include a combination of one or more continuum radiation sources with one or more discrete spectrum sources, a combination of multiple discrete spectrum sources, or a combination of multiple continuum radiation sources. Furthermore, one or more of the radiation sources may be configured to have a substantially non-normal angle of incidence or polarized to reduce patterning effects on a substrate during radiation-based heating.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract: Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.

Abstract: An apparatus and method for detecting lamp failure is described for an array of lamps used in a rapid thermal processing system. The lamp failure detection system enables identification of a failed lamp among a plurality of lamps, and also provides identification of the failure type. The apparatus applies a lamp failure detection method to the voltage drop values measured across each lamp to determine if a lamp is in a failure state. In one embodiment, a field programmable gate array is used to apply a failure detection method to the lamp voltage values.

Abstract: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.

Abstract: Embodiments of the present invention provide apparatus and method for reducing noises in temperature measurement during thermal processing. One embodiment of the present invention provides a chamber for processing a substrate comprising a chamber enclosure defining a processing volume, an energy source configured to direct radiant energy toward the processing volume, a spectral device configured to treat the radiant energy directed from the energy source towards the processing volume, a substrate support disposed in the processing volume and configured to support the substrate during processing, and a sensor assembly configured to measure temperature of the substrate being processed by sensing radiation from the substrate within a selected spectrum.

Abstract: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.

Abstract: An apparatus and method for detecting lamp failure is described for an array of lamps used in a rapid thermal processing system. The lamp failure detection system enables identification of a failed lamp among a plurality of lamps, and also provides identification of the failure type. The apparatus applies a lamp failure detection method to the voltage drop values measured across each lamp to determine if a lamp is in a failure state. In one embodiment, a field programmable gate array is used to apply a failure detection method to the lamp voltage values.

Abstract: An apparatus and method for detecting lamp failure is described for an array of lamps used in a rapid thermal processing system. The lamp failure detection system enables identification of a failed lamp among a plurality of lamps, and also provides identification of the failure type. The apparatus applies a lamp failure detection method to the voltage drop values measured across each lamp to determine if a lamp is in a failure state. In one embodiment, a field programmable gate array is used to apply a failure detection method to the lamp voltage values.

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 ?m is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.