Patents by Inventor Joseph Olson

Joseph Olson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9190548
    Abstract: An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: November 17, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: John Graff, Nicholas Bateman, Joseph Olson, Benjamin Riordon
  • Patent number: 8590485
    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: November 26, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Jay Scheuer, Joseph Olson, Frank Sinclair, Daniel Distaso
  • Publication number: 20130087189
    Abstract: An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.
    Type: Application
    Filed: October 11, 2011
    Publication date: April 11, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: John Graff, Nicholas Bateman, Joseph Olson, Benjamin Riordon
  • Publication number: 20110259269
    Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
    Type: Application
    Filed: April 26, 2010
    Publication date: October 27, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Costel Biloiu, Jay Scheuer, Joseph Olson, Frank Sinclair, Daniel Distaso
  • Patent number: 7547460
    Abstract: Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam.
    Type: Grant
    Filed: September 12, 2001
    Date of Patent: June 16, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Antonella Cucchetti, Joseph Olson, Gregory Gibilaro, Rosario Mollica
  • Publication number: 20090012666
    Abstract: A vehicle convoy system for use in connection with a vehicle, wherein the vehicle includes at least one drive mechanism to impart drive to the vehicle, includes at least a first processor that is adapted to be placed in operative or communicative connection with the drive mechanism to effect control of the drive mechanism based upon data of the position of a leading vehicle in front of the vehicle so that the vehicle moves to follow movement of the leading vehicle. The vehicle can, for example, be a self-propelled wheelchair.
    Type: Application
    Filed: July 7, 2008
    Publication date: January 8, 2009
    Inventors: RICH C. SIMPSON, VINOD K. SHARMA, JOSEPH OLSON, JEREMY R. PUHLMAN, EDMUND LoPRESTI, LEONARD CASIMIR MOSTOWY, JR.
  • Patent number: 7394073
    Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
    Type: Grant
    Filed: January 20, 2006
    Date of Patent: July 1, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James J. Cummings, Joseph Olson, Arthur H. Clough, Eric Hermanson, Rosario Mollica, Paul J. Murphy, Mark Donahue
  • Publication number: 20070241276
    Abstract: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.
    Type: Application
    Filed: November 30, 2005
    Publication date: October 18, 2007
    Inventors: Russell Low, Joseph Olson, Antonella Cucchetti, Anthony Renau, Marie Welsch
  • Publication number: 20070235663
    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 11, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, Piortr Lubicki, D. Lischer, Steve Krause, Eric Hermanson, Joseph Olson
  • Publication number: 20070221870
    Abstract: A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may comprise an end station having a mechanism for holding and translating a wafer. The apparatus may also comprise a deflector that tilts an ion beam to a predetermined angle and directs the ion beam into the end station. The wafer may be translated with respect to the ion beam for isocentric scanning at least a portion of a surface of the wafer, and wherein the ion beam is maintained at the predetermined angle during isocentric scanning.
    Type: Application
    Filed: March 21, 2006
    Publication date: September 27, 2007
    Inventors: Joseph Olson, Anthony Renau
  • Publication number: 20070085037
    Abstract: The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
    Type: Application
    Filed: September 30, 2005
    Publication date: April 19, 2007
    Inventors: Shengwu Chang, Isao Tsunoda, Nobihiro Tokoro, Dennis Rodier, Joseph Olson, Donna Smatlak, Damian Brennan, William Bintz
  • Publication number: 20060289798
    Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
    Type: Application
    Filed: January 20, 2006
    Publication date: December 28, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James Cummings, Joseph Olson, Arthur Clough, Eric Hermanson, Rosario Mollica, Paul Murphy, Mark Donahue
  • Publication number: 20060284114
    Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
    Type: Application
    Filed: December 15, 2005
    Publication date: December 21, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph Olson, Jonathan England, Morgan Evans, Douglas Fielder, Gregg Norris, Shengwu Chang, Damian Brennan, William Callahan
  • Publication number: 20060266957
    Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.
    Type: Application
    Filed: May 24, 2005
    Publication date: November 30, 2006
    Inventors: Shengwu Chang, Joseph Olson, Damian Brennan
  • Publication number: 20060249696
    Abstract: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.
    Type: Application
    Filed: May 6, 2005
    Publication date: November 9, 2006
    Inventors: Shengwu Chang, Joseph Olson, Damian Brennan
  • Publication number: 20060240651
    Abstract: A method for processing a substrate, such as a semiconductor wafer, includes performing a measurement to determine a substrate parameter distribution to be compensated, determining an adjusted implant parameter distribution to compensate for the substrate parameter distribution, and implanting the substrate in accordance with the adjusted implant parameter distribution. The substrate parameter distribution to be compensated may result from another process step and may be uniform or non-uniform. In another embodiment, an implant parameter may be varied as a function of implant position on the substrate to achieve different substrate parameter values in different areas of the substrate.
    Type: Application
    Filed: April 26, 2005
    Publication date: October 26, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, Dennis Rodier, Joseph Olson, Bret Adams
  • Publication number: 20060219936
    Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.
    Type: Application
    Filed: April 5, 2005
    Publication date: October 5, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph Olson, Eric Hermanson, Rosario Mollica, Paul Murphy
  • Publication number: 20060219954
    Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.
    Type: Application
    Filed: September 30, 2005
    Publication date: October 5, 2006
    Inventors: Russell Low, Joseph Olson, David Timberlake, James McLane, Mark Saunders, James Cummings, Thomas Callahan, Jonathan England
  • Patent number: D578131
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: October 7, 2008
    Assignee: Control4 Corporation
    Inventors: Michael Horito, Tyler Allan, Joseph Olson
  • Patent number: D680083
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: April 16, 2013
    Inventor: Terry Joseph Olson