Patents by Inventor Joseph P. Doench

Joseph P. Doench has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9892920
    Abstract: A method includes providing a first part, a second part and a bonding material between the first part and the second part. The first part and the second part are made of a first material selected from a group consisting of silicon and germanium. The bonding material includes a second material that is different than the first material. The method includes arranging the first part, the bonding material, and the second part in a furnace; and creating a bonded part by heating the first part, the second part and the bonding material to a predetermined temperature for a predetermined period followed by a predetermined solidification period. The predetermined temperature is greater than 1.5 times a eutectic temperature of an alloy including the first material and the second material and less than a melting temperature of the first material.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: February 13, 2018
    Assignee: Lam Research Corporation
    Inventors: Jihong Chen, Joseph P. Doench, Robert J. Purtell
  • Patent number: 9314854
    Abstract: A method of drilling holes comprises ductile mode drilling the holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material. The method comprises drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation. The amorphous portions of the brittle material are removed from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 ?m.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: April 19, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Lihua Li Huang, Duane D. Scott, Joseph P. Doench, Jamie Burns, Emily P. Stenta, Gregory R. Bettencourt, John E. Daugherty
  • Publication number: 20140213061
    Abstract: A method of drilling holes comprises ductile mode drilling the holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material. The method comprises drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation. The amorphous portions of the brittle material are removed from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 ?m.
    Type: Application
    Filed: January 30, 2013
    Publication date: July 31, 2014
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Lihua Li Huang, Duane D. Scott, Joseph P. Doench, Jamie Burns, Emily P. Stenta, Gregory R. Bettencourt, John E. Daugherty