Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

Abstract: A system of measuring ion beam current in a process chamber using conductive liners is disclosed. A conductive liner is used to shield the walls of the process chamber. An ion measuring device, such as an ammeter, is used to measure the current created by the ions that impact the conductive liner. In some embodiments, a mechanism to contain secondary electrons generated in the process chamber is employed. Additionally, the ions that impact the scan system or workpiece may also be measured, thereby allowing the current of the entire ion beam to be measured.

Abstract: A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate.

Abstract: An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.

Abstract: An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

Abstract: Techniques for ion beam current measurement using a scanning beam current transformer are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion beam current measurement using a transformer. The apparatus may comprise a measurement device positioned adjacent a wafer and an ion dose control module coupled to the measurement device. The measurement device may comprise a transformer through which an ion beam passes onto the wafer. The ion dose control module may calculate ion beam current passing through the transformer and adjust dose based at least in part upon the calculated ion beam current.

Abstract: A Faraday sensor test system includes a Faraday sensor configured to intercept a quantity of ions incident on said Faraday sensor, a primary conductor and a test conductor coupled to said Faraday sensor, and a controller. The controller is configured to automatically provide a test current into the test conductor in response to a test condition. The controller is further configured to receive a return current from the primary conductor in response to the test current and to compare the return current to a value representative of the test current to determine a condition of a conductive path comprising the test conductor, the Faraday sensor, and the primary conductor.

Abstract: This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

Abstract: An ion implanter includes an ion beam generator configured to generate an ion beam and direct the ion beam towards a workpiece, wherein relative motion between the ion beam and the workpiece produces a scan pattern on a front surface of said workpiece. The scan pattern has an oscillating pattern on at least a portion of said front surface of said workpiece.

Abstract: Techniques for ion beam current measurement using a scanning beam current transformer are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion beam current measurement using a transformer. The apparatus may comprise a measurement device positioned adjacent a wafer and an ion dose control module coupled to the measurement device. The measurement device may comprise a transformer through which an ion beam passes onto the wafer. The ion dose control module may calculate ion beam current passing through the transformer and adjust dose based at least in part upon the calculated ion beam current.

Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Abstract: This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

Abstract: A system, method and program product for determining the integrity of a faraday system are disclosed. The invention uses a computer infrastructure to control an automatic determination of a faraday system integrity, when the faraday system is not in operation. The determination is based on the variations on an impedance of the faraday system. An impedance of a faraday system is determined based on the discharge characteristics of a capacitor that discharges through the faraday system.

Abstract: An ion implanter includes an ion beam generator configured to generate an ion beam and direct the ion beam towards a workpiece, wherein relative motion between the ion beam and the workpiece produces a scan pattern on a front surface of said workpiece. The scan pattern has an oscillating pattern on at least a portion of said front surface of said workpiece.

Abstract: A Faraday sensor test system includes a Faraday sensor configured to intercept a quantity of ions incident on said Faraday sensor, a primary conductor and a test conductor coupled to said Faraday sensor, and a controller. The controller is configured to automatically provide a test current into the test conductor in response to a test condition. The controller is further configured to receive a return current from the primary conductor in response to the test current and to compare the return current to a value representative of the test current to determine a condition of a conductive path comprising the test conductor, the Faraday sensor, and the primary conductor.