Patents by Inventor Joseph P. Italiano
Joseph P. Italiano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8530340Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: GrantFiled: September 9, 2009Date of Patent: September 10, 2013Assignee: ASM America, Inc.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Patent number: 8088225Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).Type: GrantFiled: December 18, 2009Date of Patent: January 3, 2012Assignee: ASM America, Inc.Inventors: Matt G. Goodman, Jereon Stoutyesdijk, Ravinder Aggarwal, Mike Halpin, Tony Keeton, Mark Hawkins, Lee Haen, Armand Ferro, Paul Brabant, Robert Vyne, Gregory M. Bartlett, Joseph P. Italiano, Bob Haro
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Publication number: 20100089314Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).Type: ApplicationFiled: December 18, 2009Publication date: April 15, 2010Applicant: ASM AMERICA, INC.Inventors: Matt G. Goodman, Jereon Stoutyesdijk, Ravinder Aggarwal, Mike Halpin, Tony Keeton, Mark Hawkins, Lee Haen, Armand Ferro, Paul Brabant, Robert Vyne, Gregory M. Bartlett, Joseph P. Italiano, Bob Haro
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Patent number: 7682947Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: GrantFiled: May 30, 2007Date of Patent: March 23, 2010Assignee: ASM America, Inc.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Patent number: 7648579Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).Type: GrantFiled: February 11, 2005Date of Patent: January 19, 2010Assignee: ASM America, Inc.Inventors: Matt G. Goodman, Jereon Stoutyesdijk, Ravinder Aggarwal, Mike Halpin, Tony Keeton, Mark Hawkins, Lee Haen, Armand Ferro, Paul Brabant, Robert Vyne, Gregory M. Bartlett, Joseph P. Italiano, Bob Haro
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Publication number: 20100006024Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: ApplicationFiled: September 9, 2009Publication date: January 14, 2010Applicant: ASM AMERICA, INC.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Patent number: 7402504Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: GrantFiled: August 18, 2006Date of Patent: July 22, 2008Assignee: ASM America, Inc.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Patent number: 7238595Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: GrantFiled: March 12, 2004Date of Patent: July 3, 2007Assignee: ASM America, Inc.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Patent number: 7115521Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: GrantFiled: November 18, 2004Date of Patent: October 3, 2006Assignee: ASM America, Inc.Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Publication number: 20040219735Abstract: Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.Type: ApplicationFiled: March 12, 2004Publication date: November 4, 2004Inventors: Paul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer